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New MOSFET architectures are presently being developed in which dielectrics with high permittivity are introduced to replace SiO2-based dielectrics, which are at the end of the scaling roadmap, and where also metal gates are used to replace poly-Si gate to avoid poly-depletion effects. Key in the success of this development is the electrical behavior of such high k/metal gate devices, and more specifically the Bias-Temperature- Instabilities, which are well-known reliability problems in MOS gate stacks. In this thesis, these Bias-Temperature effects will be investigated: the electrical...

This study offers new insight into the economies of scale of ICT departments. Drawing from data on Housing Corporations, Municipalities and Hospitals, evidence was found that particularly infrastructure-related investments leverage a more efficient use of ICT resources. The measured economies between low and high infrastructure spending organizations are on average more than 20% for their operational ICT labour and for their total ICT costs. It was also found that organizations should spend a certain minimum of their ICT expenditure on applications to realize economies of scale in their...