Understanding Modern Transistors and Diodes

ISBN-13: 9780521514606 / Angielski / Twarda / 2010 / 354 str.

David L. Pulfrey

Opis

Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: - Rigorous theoretical treatment combined with practical detail - A theoretical framework built up systematically from the Schrodinger Wave Equation and the Boltzmann Transport Equation - Covers MOSFETS, HBTs and HJFETS - Uses the PSP model for MOSFETS - Rigorous treatment of device capacitance - Describes the operation of modern, high-performance transistors and diodes - Evaluates the suitability of various transistor types and diodes for specific modern applications - Covers solar cells and LEDs and their potential impact on energy generation and reduction - Includes a chapter on nanotransistors to prepare students and professionals for the future - Provides results of detailed numerical simulations to compare with analytical solutions - End-of-chapter exercises - Online lecture slides for undergraduate and graduate courses2009 IEEE Electron Devices Society Education Award
"For contributions to the teaching of semiconductor devices at both the undergraduate and graduate levels"2009 Teaching Award for Excellence in Engineering and Geoscience Education
"From the Association of Professional Engineers and Geoscientists of British Columbia."

Spis treści

Preface; 1. Introduction; 2. Energy band basics; 3. Electron and hole concentrations; 4. Thermal equilibrium; 5. Charge transport; 6. np-and Np-junction basics; 7. Solar cells; 8. Light-emitting diodes; 9. HBT basics; 10. MOSFET basics; 11. HJFET basics; 12. Transistor capacitances; 13. Transistors for high-speed logic; 14. Transistors for high frequencies; 15. Transistors for memories; 16. Transistors for high power; 17. Transistors for low noise; 18. Transistors for the future; Appendix A. Physical constants; Appendix B. Selected material properties; Appendix C. N-MOSFET parameters; Index.