Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features:

- Rigorous theoretical treatment combined with practical detail

- A theoretical framework built up systematically from the Schrodinger Wave Equation and the Boltzmann Transport Equation

- Covers MOSFETS, HBTs and HJFETS

- Uses the PSP model for MOSFETS

- Rigorous treatment of device capacitance

- Describes the...