Atomic Diffusion in III-V Semiconductors

ISBN-13: 9780852743515 / Angielski / Twarda / 1988 / 236 str.

Brian Tuck

Opis

III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology.
Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

Recenzje

"… comprehensive answers to many practical questions, those seeking more detailed treatment are directed to an excellent bibliography. … concise text of outstanding clarity. Because of these rare qualities the book is strongly recommended for inclusion in libraries associated with either academic or industrial institutions where semiconductor technology is taught or practised."
-The Australian Physicist

Spis treści

PREFACEGALLIUM ARSENIDE AND FRIENDSELEMENTS OF DIFFUSIONThe diffusion equationsAnalytical solutions to the diffusion equationFinite difference methods of solutionExperimental techniquesAnalysis of resultsInteraction of defectsThe built-in field effectThe external systemAssessment of published dataDIFFUSION OF SHALLOW DONORS, INCLUDING GROUP IVSulphurSelenium and telluriumTinSilicon and germaniumSHALLOW ACCEPTORS, ESPECIALLY ZINCThe substitutional-interstitial mechanismZinc in GaAsZinc in gallium phosphideZinc in indium phosphideZinc in other compoundsCadmium in InPCadmium in other compoundsDiffusion of other group II elementsDIFFUSION OF TRANSITION ELEMENTSChromium in GaAsManganese in GaAsIron in GaAsCobalt in GaAsIron and chromium in InPOTHER FAST DIFFUSERSSilver in InPSilver in GaAsSilver in InAs and GaPDiffusion of goldDiffusion of copperSELF-DIFFUSION AND RELATED PHENOMENADiffusion in GaAsInP and InAsSelf-diffusion in InSbDiffusion in GaSbDiffusion in superlattices

O autorze

Brian Tuck