Wyniki wyszukiwania:
wyszukanych pozycji: 18
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Cryogenic Operation of Silicon Power Devices
ISBN: 9780792381570 / Angielski / Twarda / 1998 / 148 str. Termin realizacji zamówienia: ok. 20 dni roboczych. The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac tical means of fabricating electrical components and devices with lossless con ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper ating systems could be found such as the 5 T saddle magnet...
The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a ...
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cena:
390,87 zł |
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Advanced Power Mosfet Concepts
ISBN: 9781489993878 / Angielski / Miękka / 2014 / 562 str. Termin realizacji zamówienia: ok. 20 dni roboczych. During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs.... During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are disper... |
cena:
1094,52 zł |
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Advanced Power Rectifier Concepts
ISBN: 9780387755885 / Angielski / Twarda / 2009 / 352 str. Termin realizacji zamówienia: ok. 20 dni roboczych. During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced... During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this... |
cena:
586,33 zł |
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Fundamentals of Power Semiconductor Devices
ISBN: 9783319939872 / Angielski / Twarda / 2018 / 1086 str. Termin realizacji zamówienia: ok. 20 dni roboczych. This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics in...
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cena:
469,06 zł |
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The Igbt Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor
ISBN: 9781455731435 / Angielski / Twarda / 2015 / 732 str. Termin realizacji zamówienia: ok. 18-20 dni roboczych. The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications... The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditi... |
cena:
655,86 zł |
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Silicon Carbide Power Devices
ISBN: 9789812566058 / Angielski / Twarda / 2006 / 528 str. Termin realizacji zamówienia: ok. 22 dni roboczych. Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enable...
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cena:
907,70 zł |
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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design, and Applications
ISBN: 9780081023068 / Angielski / Miękka / 2018 / 418 str. Termin realizacji zamówienia: ok. 18-20 dni roboczych. |
cena:
970,67 zł |
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Advanced Power Mosfet Concepts
ISBN: 9781441959164 / Angielski / Twarda / 2010 / 562 str. Termin realizacji zamówienia: ok. 20 dni roboczych. During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs.... During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are disper... |
cena:
1094,52 zł |
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Fundamentals of Power Semiconductor Devices
ISBN: 9783030067656 / Angielski / Miękka / 2019 / 1086 str. Termin realizacji zamówienia: ok. 20 dni roboczych. |
cena:
390,87 zł |
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Gallium Nitride and Silicon Carbide Power Devices
ISBN: 9789813109407 / Angielski / Twarda / 2017 / 592 str. Termin realizacji zamówienia: ok. 22 dni roboczych. During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power...
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, re...
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cena:
556,16 zł |
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Advanced High Voltage Power Device Concepts
ISBN: 9781461402688 / Angielski / Twarda / 2011 / 586 str. Termin realizacji zamówienia: ok. 20 dni roboczych. The devices described in "Advanced MOS-Gated Thyristor Concepts" are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional...
The devices described in "Advanced MOS-Gated Thyristor Concepts" are utilized in microelectronics production equipment, in power transmission equipmen...
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cena:
781,79 zł |
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Modern Silicon Carbide Power Devices
ISBN: 9789811284274 / Angielski Termin realizacji zamówienia: ok. 22 dni roboczych. |
cena:
865,74 zł |
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Silicon Carbide Power Devices
ISBN: 9789813203235 / Angielski / Miękka / 2006 / 528 str. Termin realizacji zamówienia: ok. 22 dni roboczych. Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enable...
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cena:
314,81 zł |
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Advanced High Voltage Power Device Concepts
ISBN: 9781493901326 / Angielski / Miękka / 2014 / 568 str. Termin realizacji zamówienia: ok. 20 dni roboczych. The devices described in "Advanced MOS-Gated Thyristor Concepts" are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional...
The devices described in "Advanced MOS-Gated Thyristor Concepts" are utilized in microelectronics production equipment, in power transmission equipmen...
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cena:
781,79 zł |
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Silicon RF Power Mosfets
ISBN: 9789812561213 / Angielski / Twarda / 2005 / 320 str. Termin realizacji zamówienia: ok. 22 dni roboczych. - This is the first book that is devoted to Silicon RF Power MOSFETs
- It can be used as a reference by practicing engineers in the telecommunications industry and as a teaching guide for RF courses at universities. - This is the first book that is devoted to Silicon RF Power MOSFETs
- It can be used as a reference by practicing engineers in the telecommunicati... |
cena:
739,81 zł |
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Cryogenic Operation of Silicon Power Devices
ISBN: 9781461376354 / Angielski / Miękka / 2012 / 148 str. Termin realizacji zamówienia: ok. 20 dni roboczych. The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac- tical means of fabricating electrical components and devices with lossless con- ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans- mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper- ating systems could be found such as the 5 T saddle...
The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a ...
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cena:
390,87 zł |
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Fundamentals of Power Semiconductor Devices
ISBN: 9781489977656 / Angielski / Miękka / 2016 / 1069 str. Termin realizacji zamówienia: ok. 20 dni roboczych. This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics in...
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cena:
621,01 zł |
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The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor
ISBN: 9780323999120 / Angielski / Twarda / 2022 / 850 str. Termin realizacji zamówienia: ok. 8-10 dni roboczych (Dostawa przed świętami) |
cena:
776,09 zł |
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