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Hydrogenous species play a key role in radiation
induced charge buildup in metal oxide semiconductor
field effect transistors (MOSFETs). The amount of
hydrogen present in ambient gases used during device
fabrication can be correlated to the concentration of
radiation-induced interface traps post processing.
The effects of water on defect formation in MOSFETs
before and after radiation exposure have been
studied. Greatly enhanced post-irradiation defect
generation was observed in the gate oxides of
p-channel MOS transistors that were exposed to water.
Low frequency (1/f) noise measurements...