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This volume presents a systematic and mathematically accurate description and derivation of transport equations in solid state physics, in particular semiconductor devices.

This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.

In this book a hierarchy of macroscopic models for semiconductor devices is presented. Three classes of models are studied in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each of the models is shown, including physical discussions. Furthermore, the corresponding mathematical problems are analyzed, using modern techniques for nonlinear partial differential equations. The equations are discretized employing mixed finite-element methods. Also, numerical simulations for modern semiconductor devices are performed,...

This volume presents a systematic and mathematically accurate description and derivation of transport equations in solid state physics, in particular semiconductor devices.