Strain-Induced Effects in Advanced Mosfets

ISBN-13: 9783709103814 / Angielski / Twarda / 2010 / 252 str.

Viktor Sverdlov

Opis

This book covers modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is explored in devices using analytical k.p and numerical pseudopotential methods. Includes a rigorous overview of transport modeling.

Spis treści

1 Introduction 2 Scaling, Power Consumption, and Mobility Enhancement Techniques 3 Strain and Stress 4 Basic Properties of the Silicon Lattice 5 Band Structure of Relaxed Silicon 6 Perturbative Methods for Band Structure Calculations in Silicon 7 Strain Effects on the Silicon Crystal Structure 8 Strain Effects on the Silicon Band Structure 9 Strain Effects on the Conduction Band of Silicon 10 Electron Subbands in Silicon in the Effective Mass Approximation 11 Electron Subbands in Thin Silicon Films 12 Demands of Transport Modeling in Advanced MOSFETs

Blurb

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given