Semiconductor Microchips and Fabrication: A Practical Guide to Theory and Manufacturing

ISBN-13: 9781119867784 / Angielski / Twarda / 2022

Yaguang Lian

Spis treści

Author Biography xiPreface xiii1 Introduction to the Basic Concepts 11.1 What Is a Microchip? 11.2 Ohm's Law and Resistivity 11.3 Conductor, Insulator, and Semiconductor 5References 52 Brief Introduction of Theories 72.1 The Birth of Quantum Mechanics 72.2 Energy Band (Band) 11References 153 Early Radio Communication 173.1 Telegraph Technology 173.2 Electron Tube 19References 224 Basic Knowledge of Electric Circuits (Circuits) 234.1 Electric Circuits and the Components 234.2 Electric Field 264.3 Magnetic Field 284.4 Alternating Current 305 Further Discussion of Semiconductors and Diodes 335.1 Semiconductor Energy Band 335.2 Semiconductor Doping 365.3 Semiconductor Diode 42References 466 Transistor and Integrated Circuit 476.1 Bipolar Transistor 476.2 Junction Field Effect Transistor 496.3 Metal-Semiconductor Field Effect Transistor 526.4 Metal-Insulator-Semiconductor Field Effect Transistor 55References 607 The Development History of Semiconductor Industry 617.1 The Instruction of Semiconductor Products and Structures 617.2 A Brief History of the Semiconductor Industry 637.3 Changes in the Size of Transistors and SiliconWafers 657.4 Clean Room 677.5 Planar Process 71References 758 Semiconductor Photonic Devices 778.1 Light-Emitting Devices and Light-Emitting Principles 778.2 Light-Emitting Diode (LED) 828.3 Semiconductor Diode Laser 888.3.1 Resonant Cavity 898.3.2 Reflection and Refraction of Light 918.3.3 Heterojunction Materials 938.3.4 Population Inversion and Threshold Current Density 94References 969 Semiconductor Light Detection and Photocell 979.1 Digital Camera and CCD 979.2 Photoconductor 1009.3 Transistor Laser 1019.4 Solar Cell 105References 10610 Manufacture of Silicon Wafer 10910.1 From Quartzite Ore to Polysilicon 11010.2 Chemical Reaction 11310.3 Pull Single Crystal 11510.4 Polishing and Slicing 116References 12311 Basic Knowledges of Process 12511.1 The Structure of Integrated Circuit (IC) 12511.2 Resolution of Optical System 12811.3 Why Plasma Used in the Process 131References 13312 Photolithography (Lithography) 13512.1 The Steps of Lithography Process 13512.1.1 Cleaning 13512.1.2 Dehydration Bake 13612.1.3 Photoresist Coating 13812.1.4 Soft Bake 14112.1.5 Alignment and Exposure 14112.1.6 Developing 14512.1.7 Inspection 14612.1.8 Hard Bake 14712.1.9 Descum 14812.2 Alignment Mark (Mark) Design on the Photomask 15212.3 Contemporary Photolithography Equipment Technologies 156References 15913 Dielectric Films Growth 16113.1 The Growth of Silicon Dioxide Film 16213.1.1 Thermal Oxidation Process of SiO2 16213.1.2 LTO Process 16413.1.3 PECVD Process of Silicon Dioxide 16613.1.4 TEOS + O3 Deposition Using APCVD System 16713.2 The Growth of Silicon Nitride Film 16813.2.1 LPCVD 16813.2.2 PECVD Process of Silicon Nitride 17113.3 Atomic Layer Deposition Technique 174References 17714 Introduction of Etching and RIE System 17914.1 Wet Etching 17914.2 RIE System for Dry Etching 18214.2.1 RIE Process Flow and Equipment Structure 18214.2.2 Process Chamber 18414.2.3 Vacuum Pumps 18614.2.4 RF Power Supply (Source) and Matching Network (Matchwork) 18714.2.5 Gas Cylinder and Mass Flow Controller (MFC) 18914.2.6 Heater and Coolant 194References 19615 Dry Etching 19715.1 The Etch Profile of RIE 19715.1.1 Case 1 19815.1.2 Case 2 20115.2 Etching Rate of RIE 20315.3 Dry Etching of III-V Semiconductors and Metals 20615.4 Etch Profile Control 20715.4.1 Influence of the PR Opening Shape on the Etch Profile 20815.4.2 The Effect of Carbon on Etching Rate and Profile 20915.5 Other Issues 21115.5.1 The Differences Between RIE and PECVD 21115.5.2 The Difference Between Si and SiO2 Dry Etching 21415.6 Inductively Coupled Plasma (ICP) Technique and Bosch Process 21515.6.1 Inductively Coupled Plasma Technique 21615.6.2 Bosch Process 219References 22316 Metal Processes 22516.1 Thermal Evaporation Technique 22516.2 Electron Beam Evaporation Technique 22716.3 Magnetron Sputtering Deposition Technique 23116.4 The Main Differences Between Electron Beam (Thermal) Evaporation and Sputtering Deposition 23416.5 Metal Lift-off Process 23516.6 Metal Selection and Annealing Technology 24116.6.1 The Selection of Metals 24116.6.2 Metal Annealing 242References 24317 Doping Processes 24517.1 Basic Introduction of Doping 24517.2 Basic Principles of Diffusion 24617.3 Thermal Diffusion 24717.4 Diffusion and Redistribution of Impurities in SiO2 24817.5 Minimum Thickness of SiO2 Masking Film 25017.6 The Distribution of Impurities Under the SiO2 Masking Film 25117.7 Diffusion Impurity Sources 25217.8 Parameters of the Diffusion Layer 25517.9 Four-Point Probe Sheet Resistance Measurement 25617.10 Ion Implantation Process 25717.11 Theoretical Analysis of Ion Implantation 25917.12 Impurity Distribution after Implantation 26017.13 Type and Dose of Implanted Impurities 26217.14 The Minimum Thickness of Masking Film 26317.15 Annealing Process 26417.16 Buried Implantation 26617.16.1 Implantation through Masking Film 26617.16.2 SOI Manufacture 267References 27018 Process Control Monitor, Packaging, and the Others 27118.1 Dielectric Film Quality Inspection 27118.2 Ohmic Contact Test 27318.3 Metal-to-Metal Contact 27418.4 Conductive Channel Control 27718.5 Chip Testing 27818.6 Dicing 27918.7 Packaging 28018.8 Equipment Operation Range 28118.9 Low-k and High-k Dielectrics 28218.9.1 Copper Interconnection and Low-k Dielectrics 28318.9.2 Quantum Tunneling Effect and High-k Dielectrics 28618.10 End 291References 293Index 295

O autorze

Mr. Yaguang Lian is a Research Engineer at Holonyak Micro & Nanotechnology Lab, the University of Illinois, USA. In his twenty years of working, he has trained thousands of students in using the manufacturing machines. Before Mr. Lian came to the USA, he worked at the Hebei Semiconductor Research Institute (HSRI), China, for over 13 years. At HSRI, he oversaw the entire manufacturing process line, from implantation to packaging, in addition to IC design work. Working in the field of semiconductors for over 30 years, Mr. Lian deeply understands the key points of the manufacturing process and has a profound knowledge on both theory and equipment.