Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

ISBN-13: 9783030424237 / Angielski / Twarda / 2021 / 383 str.

Jennifer Rupp; Daniele Ielmini; Ilia Valov

Spis treści

Preface.- Memristive computing devices and applications.- Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication.- Modeling resistive switching materials and devices across scales.- Review of mechanisms proposed for redox based resistive switching structures.- Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices.- Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups.- SiO2 based conductive bridging random access memory.- Reset switching statistics of TaOx-based Memristor.- Effect of O2- migration in Pt/HfO2/Ti/Pt structure.- Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer.- Interface-type resistive switching in perovskite materials.- Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition.- Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature.- Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions.- Resistive switching memory using biomaterials.- Optical memristive switches.

O autorze

Prof. Jennifer Rupp is the Thomas Lord Associate Professor of Electrochemical Materials at the

Department of Materials Science and Engineering, and Assistant Professor at the Department of

Electrical Engineering and Computer Science at MIT. Prior she is was non-tenure track assistant

professor at ETH Zurich Switzerland where she held two prestigeous externally funded career

grants, namely an ERC Starting Grant (SNSF) and Swiss National Science Foundation (SNF)

professorship.

Blurb

This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. 

A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. 

The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept:

-Explains diffusive processes at room temperature and materials/materials combination in resistive switching;

-Illustrates the role of defects in zero, one, and two dimensions;

-Features applications of ReRAMs in engineering such as novel computing architectures.