Radiation Effects in Semiconductors and Semiconductor Devices

ISBN-13: 9781468490718 / Angielski / Miękka / 2012 / 280 str.

V. S. Vavilov

Spis treści

one.- I The Theory of the Formation and Nature of Radiation-Induced Defects.- 1. Production of Radiation Defects by Fast Electrons and ?-Rays.- 2. On the Production of Frenkel Defects in Diamond-type Lattices.- The 0 ? 01 transition.- Displacement into point b [(2, 0, 0,), (0, 2, 0) or (0, 0, 2)].- 3. Defect Production by Neutrons and by Heavy Charged Particles.- 4. Defect Production by Ionization Processes.- II Experimental Study of Radiation Defects in Semiconductors and Control of Semiconductor Properties by Irradiation.- 1. Threshold Energy of Defect Production in Germanium, Silicon and Other Semiconductors.- 2. Optical and Photoelectric Investigation of Radiation-Induced Defects.- Photoconductivity Spectra.- Photoconductivity relaxation.- 3. Investigation of Defects by Electron Paramagnetic Resonance (EPR) and by Measurement of Changes in the Magnetic Properties.- E-centers.- J- and C-centers.- B-centers.- 4. Interaction of Radiation-Induced Defects with Impurities.- Energy spectrum of radiation-induced defects in silicon.- Radiation defects in lithium-doped silicon 60 Radiation-induced defects in pure germanium and in gold-doped germanium.- 5. Stability and Annealing of Radiation Defects in Semiconductors..- Low-temperature irradiation and annealing.- 6. The Influence of Defect Clusters, Produced by Fast Neutrons and Heavy Charged Particles, on the Properties of Semiconductors.- 7. Structural Investigation of Radiation Defects in Semiconductors.- Data on isolated (point) defects.- Radiation-induced defect clusters in germanium and silicon.- Radiation-induced defect clusters in semiconductor compounds of the AIII BV type.- Electron microscopy methods.- 8. Influence of Radiation Defects on the Thermal Conductivity of Semiconductors.- 9. Radiation Doping of Semiconductors.- Ion implantation of dopants.- “Channeling “ of charged particles in crystals.- Doping by nuclear reactions (transmutation doping).- III Ionization in Semiconductors as a Result of the Stopping of Charged Particles, Absorption and Scattering of Photons.- 1. Energy Losses on Ionization.- Energy losses by charged particles.- Ionization as a result of absorption and scattering of ?-radiation and X-rays.- 2. Mean Ionization Energy in Semiconductors.- 3. Energy Consumed in the Ionization and Excitation of Lattice Vibrations.- Two.- I Radiation Effects in Transistors.- 1. Experimental Determination of the Properties of Irradiated Transistors.- 2. Main Functions Determining the Rate of Change of Transistor Parameters as a Result of Bulk Processes. Criteria of Radiation Stability of Transistors.- 3. Behavior of Transistors Irradiated with Large Doses.- 4. Effect of Recombination at p-n Junctions on the Current Transport Coefficient of Transistors.- 5. Dependence of Radiation-Induced Changes in the Lifetime of Minority Carriers on the Electrophysical Properties of Irradiated Semiconductor Materials.- Germanium.- Silicon.- 6. Surface Effects in Irradiated Transistors.- 7. Influence of Operating Conditions and Irradiation Temperature on the Radiation Stability of Transistors.- 8. Some Problems of Thyristor Operation Under Irradiation.- II Radiation Effects in Semiconductor Diodes.- 1. Stable Radiation-Induced Changes in the Forward Branch of the V-I Characteristics of Diodes.- 2. Experimental Data on Changes in the Conductivity of Germanium and Silicon upon Irradiation.- 3. Radiation-Induced Changes in the Reverse V-I Characteristics of Diodes.- 4. Effect of Radiation on the Parameters of “Stabilitrons”..- III Effect of Pulsed Radiation on Semiconductor Devices.- 1. Characteristics of Pulsed Irradiation of Semiconductor Devices.- 2. Ionization Current in p-n Junctions.- 3. Equivalent Diode Circuit Modelling Diode Response to Ionizing Radiation Pulses.- 4. Response of Transistors to Ionizing Radiation Pulses and Equivalent Circuits.- 5. Experimental Data on the Effect of Pulsed Radiation on Semiconductor Devices.