Photovoltaic Power Generation: Proceedings of the Second Contractors' Meeting Held in Hamburg, 16-18 September 1987

ISBN-13: 9789401078214 / Angielski / Miękka / 2012 / 320 str.

R. Van Overstraeten; G. Caratti

Opis

Amorphous silicon PV panel mass production will require to mas ter plasma chemical deposition in terms of large sizes, cost, maintenance and all other problems related to industrialization. Since plasma deposition is a novel technique, the development of all this production related know how involves a considerable technical research effort. The major problems related to the design of a production deposi tion machine are the following - deposition should be uniform on very large area substrate (typical dimension 1 meter); - the deposited amorphous silicon should have good electronic properties (density of state of the order or less than 16 3 10 cm /eV) and very low impurities concentrations (for exam ple oxygen atomic concentration should idealy be less than 0. 01 %); - the film stress should be limited, the density of ponctual defects (particulates) should remain reasonable (less than 2 per 100 cm ); - dopant level control should be stable and efficient; - silane consumption should remain reasonably efficient - financial cost being important the machine productivity should be high hence deposition rate optimized; - downtime due to maintenance should be reduced to a minimum. We present here some results on the R&D effort addressed to the above mentioned problems. An original single chamber was designed. This machine will be made available on the market for R&D purposes by a process machine company. Finally the maintenance problem is considered. Plasma cleaning based on a fluorine containing etchant gases is studied and evaluated. 2."

Spis treści

Amorphous Silicon Solar Cells (AMOR).- 1. A-Si Solar cells prepared by the glow discharge technique.- · Development of the scientific and technical basis for integrated amorphous silicon modules.- -Deposition techniques for a-Si.- -Physics of the pin device.- -Improvement of the device structure.- -Description of the research work carried out at SCK/CEN.- -AES analysis of the SnO2/a-Si:H inferface.- -The French contribution to the project.- -Light trapping in a-Si:H solar cells by texturization of the glass substrate.- -Photochemical process induced by a low pressure Hg lamp and a pulsed ArF excimer laser for depositing hydrogenated silicon films.- -Vacuum UV photo CVD for amorphous silicon carbon alloys.- -Preparation of improved amorphous silicon cells with p-i-n structure based on new volatile hydrides and fluorides of silicon and germanium.- -Development of the scientific and technical basis for integrated amorphous silicon modules.- · Low-gap alloys for amorphous silicon based solar cells -Narrow band-gap alloys for the improvement of efficiency of amorphous silicon-based solar cells.- -The Italian contribution to the project.- -Characterization of amorphous silicon alloys through thermal H effusion.- -Characterization of hydrogenated amorphous silicon by photo deflection spectroscopy.- • Kinetic study of the deposition process of glow discharge a-Si:H for high efficiency solar cells.- -The Greek contribution to the project.- -Characterization of SiH4:H2 plasmas for a-Si:H film deposition.- · Electro-Optical properties of a-Si;H/?C-Si;H and a-Si:C:H/?C-Si:C:H undoped and doped films produced by a TCDDC system.- · Eyaluation of promising alternative a-Si deposition method.- · Development of a high deposition rate technique for device quality thin films of hydrogenated amorphous silicon.- · Preparation of solar grade amorphous silicon for PV cells by means of an electrolytic process.- · Hydrogenated amorphous silicon by disilane LPCVD.- Thin Film Solar Cells From Alternative Materials (ALTERNA).- 1. High efficiency crystalline silicon thin-film solar cells.- · High efficiency thin-film solar cells on upgraded metallurgical grade silicon substrates.- · The French contribution to the project.- · Modelling of epitaxial cells on UMG silicon and feasibility of a high throughput epitaxial reactor.- · Growth and characterization of poly-Si ingots.- · Growth and characterization of poly-Si ingots.- 2. Thin film solar cells based on II-VI and ternary chalcopyrite semiconductor materials.- · Thin film solar cells based on the chalcopyrite semiconductor  U(GA,IN)SE.- · Research and development on sprayed CdS-CuInSe2 thin filmsolar cells.- · CuInSe2/CdS thin film solar cells by R.F. sputtering.- · Electrochemical study of chalcopyrite semiconductor s.- · Thin film of copper indium diselenide for PV devices.- · Development of CdSe thin film solar cells with regard to the requirements for the use in tandem structures.- · The fabrication of merocyanine dyes for use as PV materials.- 3. III-V compound semiconductors for use in thin film cells or in monolytic multilayer cells.- · Optimization of high efficiency multilayer solar cells based on III-V compounds.- -MOCVD and characterization.- -KBE and physical analysis.- -Inhomogeneities in LEC GaAs substrates for solar cell applications.- · High efficiency multispectral cells based on III-V compound semiconductors.- GaAs thin film solar cells obtained by vapour phase homoepitaxy (VPE) on reusable substrates.- -The contribution by ENEA.- -The contribution by CISE.- · Study on the applicability of the ionized cluster beam deposition technology for GaAs thin film solar cells.- High efficiency III-V solar cells for use with fluorescent concentrators.- -The German contribution to the project.- -The Belgian contribution to the project.- · Hydrogen effect on the electrical properties of amorphous gallium arsenide.- List of authors.