Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors

ISBN-13: 9780750310161 / Angielski / Twarda / 2006 / 650 str.

Jean Leotin; Leotin Leotin; Junichiro Kono

Opis

Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS). In particular, it explores the latest findings in the fundamental physics of narrow gap materials and quantum heterostructures as well as device physics, including mid- and far-infrared lasers, detectors, and spintronic devices.
This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.
Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving field.

Spis treści

PART I: SPIN-RELATED PHENOMENAFerromagnetism in narrow gap semiconductorsGrowth, magnetic and transport studies of GaSb-based ferromagnetic semiconductors(Eu,Gd)Te ferromagnetic semiconductor layers-MBE growth, magnetic and structural characterizationElectrical and magnetic characterization of impurity states in diluted magnetic semiconductors Pb1-xGexTe:CrOmnidirectional spin lifetime enhancement for spin device applicationsSide-gate control of Rashba spin-orbit interaction in channels at narrow gap hetero-junctionsKinetic and zero electric field confinement and Rashba splitting in gated HgCdTe accumulation layersSpin splitting in Ga1-xAlxAs parabolic quantum wells controlled by electric fieldAnomalous spin splitting of shallow donor bound electrons in InAs-based heterostructures under electrical injection conditionsInvestigation of electron spin states in InGaAs/InAlAs and InGaSb/InAlSb heterostructuresWeak anti-localization in Sn-doped InSb thin film layers on GaAs(100) substratesDetermining the spin Hall conductance via charge current and noisePART II: GROWTH, FABRICATION, CHARACTERIZATION, AND THEORYInSb/InAs type II quantum structures for mid-IR laser applicationsSb-based nanostructures for mid-IR applicationsPhonons in InGaAs/AlGaAs quantum dot superlattices: a Raman studyElectronic Raman scattering in self-organized InAs quantum dot structuresSelection-rule breaking of Raman scattering in InSb thin films grown on GaAs(001)Influence of growth conditions on optical and electrical properties of MOVPE-grown InAs1-xSbxInSb, InAs and In2O3 nanowires grown by vapor transport with aid of FIB Ga ionsElectrical and optical properties of hydrogen-passivated GaSbSpectral study of persistent photoconductivity in InAs/A1Sb QW heterostructuresRoom-temperature electroluminescence of A1Sb/INAs1-xSbx quantum wells grown by MOVPEApplication of quantum cascade lasers for cyclotron resonance measurements in InAsxSb1-x alloys Quantum transport in the accumulation layer at InSb/GaAs(100) hetero-interfaceOptical deformation potentials for PbSe and PbTeDeformation potentials of a semimetal; intersubband transitions in HgTe/HgCdTe superlatticesMagnetic contribution to the specific heat of IV-VI semimagnetic semiconductorsPeculiarities of conductivity of PbSnTe(In) in the persistent photoconductivity regimeOscillator parameters of PbTeGallium-induced resonant states in Pb1-xSnxTe:Ga under pressureElectrical properties of n-layers of narrow gap semiconductors formed by low energy ion beam millingPump-probe measurement of lifetime engineering in far-infrared SiGe quantum wellsIntersubband transitions in GaP-AlP heterostructures for infrared applicationsTransport characteristics of In1-xGaxN films by MOVPEInfluence of indium on the vibrational modes of dilute narrow band gap GaNAs alloysVariable range hopping transport in narrow-gap semiconducting partially filled skutterudites.Raman scattering study of the lattice dynamics of the narrow-gap semiconducting alkaline-earth disilicideHall effect in the variable range hopping regime in CulnSe2PART III: CARBON NANOTUBESCarbon nanotubes as narrow gap semiconducting materialsTheory of the Aharonov-Bohm effect in carbon nanotubesUnconventional magnetotransport phenomena in individual carbon nanotubesDynamic magnetic alignment of single-walled carbon nanotubes in megagauss fieldsNano-space transport in crossed multi-walled carbon nanotubesMagneto-optical study of Aharonov-Bohm effect on second subbands in single-walled carbon nanotubesPressure dependence of Raman modes in DWCNT filled with 1D nanocrystalline PbI2 semiconductorPART IV: IR AND THz EMITTERSQuantum cascade lasers: current technology and future goalsAntimonide quantum cascade lasers for the 3-5 µm wavelength rangeBuried waveguide structures in THz quantum cascade lasersFabry-Perot and distributed-feedback mid-infrared "W" diode lasersMid-infrared emission from 100% spin-polarized states in IV-VI verticalcavity surface-emitting lasersLow threshold 2.37µm InGaAsSb/GaSb QW lasers: towards the ideal quantum well laser?Comparative study of AlGaAsSb/GaInAsSb multiple quantum wells lasers in the wavelength range between 2 and 3 µmOptimization of the indium and nitrogen concentration for long-wavelength emission of InxGa1-xAs1-yNy lasersEffects of strain and nonparabolicity on optical gain and threshold current in mid-IR InxGa1-xAsySb1-y /Al0.35Ga0.65As0.03Sb0.97 quantum well lasersElectroluminescence studies of laser heterostructures with InSb quantum dot active regionNear infrared intersubband transitions in delta-doped InAs/AlSb multiquantum wellsThe temperature dependence of photoluminescence and IR photoconductivity in InGaAs/GaAs quantum dot heterostructuresParametric generation of mid IR radiation in GaAs/InGaAs/InGaP lasers and waveguidesTerahertz radiation from InAs, InGaAs and InSb excited by femtosecond optical pulses at wavelengths of 800 and 1560 nmStimulated emission of optically pumped CdxHg1-xTe films in the range 3-5 µm at 77 KPART V: IR AND THz DETECTORS, ELECTRONIC DEVICES, AND MESOSCOPIC STRUCTURESPhysics and applications of InAs/(GaIn)Sb short period superlatticesRecent results on SOFRADIR HgCdTe detectorsA superlattice infrared photodetector operating at room temperature in the 3-5 µm wavelength domainStudy on an up-conversion quantum-well infrared photodetector integrated with a light-emitting diodeStudy on lifted-off quantum well infrared photodetectorNarrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectorsProgress towards a mid-infrared single photon sourceElectron transport in InAs field effect and mesoscopic devicesThe quasi-rectangular quantum well for high electron mobility transistors (HEMT)Nanowire magnetic memory cellMeasurements of magnetic domain-wall velocity detected by local Hall effectMesoscopic spin-dependent ballistic transport in InSb- and InAs-based heterostructuresSGM measurements on a disordered InGaAs QPCPART VI: NONLINEAR DYNAMICS AND ULTRAFAST PHENOMENABloch oscillating super-superlatticesTrembling motion of electrons in NGSSpin dynamics in dilute nitride semiconductors at room temperatureElectron spin relaxation induced by nuclei in quantum dots in time resolved photoluminescence experimentsCritical role of mobility in determination of spin relaxation in narrow gap semiconductor quantum wellsTime resolved studies of magnetic and non-magnetic narrow-gap semiconductorsCarrier population effects on polaron states in InAs-GaAs self-assembled quantum dotsPART VII: MAGNETO-TRANSPORT AND MAGNETO-OPTICSTwo-dimensional magnetoexcitons in the presence of spin-orbit interactionsMagneto-spectroscopy of MIR quantum cascade lasersElectron-phonon interaction in quantum cascade structures probed by Landau level spectroscopyPhotocurrents in InAs/AlGaSb quantum wellsElectronic continuum states and mid-infrared absorption of InAs/GaAs quantum dotsSpin-flip hopping between quantum dots of HgSe:FeSpin-spin subband Landau-level coupling in InSb quantum wellsCyclotron resonance study of InAs/AlSb qantum well heterostructuresMagnetospectroscopy of the double quantum well electron statesCoherent magnetic breakdown in 2D hole system at p-GaAs/AlGaAs heterointerface under uniaxial compressionStudy of multicarrier transport in bulk HgCdTe using 15T pulsed magnetic fieldsMagneto-transport properties in AlxGa1-xAsySb1-y/InAs quantum wells

O autorze

Junichiro Kono, Jean Leotin