Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK

ISBN-13: 9781402084249 / Angielski / Twarda / 2008 / 216 str.

Ben Murdin; Steve Clowes; B. N. Murdin

Opis

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research.

Spis treści

Part I – Spin-Related Phenomena Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well W.R. Branford, A. M. Gilbertson, P. D. Buckle, L. Buckle, T. Ashley, F. Magnus, S.K. Clowes, J.J. Harris, and L. F. Cohen Photogalvanic Effects in HgTe Quantum Wells B. Wittmann, S. N. Danilov, Z. D. Kwon, N. N. Mikhailov, S.A. Dvoretsky, R. Ravash, W. Prettl, and S. D. Ganichev Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers P. Dziawa, W. Knoff, V. Domukhovski, J. Domagala, R. Jakiela, E. Lusakowska, V. Osinniy, K. Swiatek, B. Taliashvili, and T. Story Control and Probe of Carrier and Spin Relaxations in InSb Based Structures G. A. Khodaparast, R. N. Kini, K. Nontapot, M. Frazier, E. C. Wade, J. J. Heremans, S. J. Chung , N. Goel , M. B. Santos , T. Wojtowicz, X. Liu, and J. K. Furdyna Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells K. L. Litvinenko, B. N. Murdin, S. K. Clowes, L. Nikzad, J. Allam, C. R. Pidgeon, W. Branford, L. F. Cohen, T. Ashley, and L. Buckle Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures H. Nose, S. Sugahara, and H. Munekata Temperature Dependence of the Electron Lande g-Factor in InSb C.R. Pidgeon, K.L. Litvinenko, L. Nikzad, J. Allam, L.F. Cohen, T. Ashley, M. Emeny, and B.N. Murdin Anomalous Spin Splitting of Electrons in InSb type-II Quantum Dots in an InAs Matrix Ya.V. Terent’ev, O.G. Lyublinskaya, A.A. Toropov, B.Ya. Meltser, A.N. Semenov and S.V. Ivanov Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling via Weak Anti-Localization in InSb Quantum Wells A.R. Dedigama, D. Jayathilaka, S.H. Gunawardana, S.Q. Murphy, M. Edirisooriya, N. Goel, T.D. Mishima, and M.B. Santos Part II – Growth, Fabrication,Characterisation and Theory Picosecond Carrier Dynamics in Narrow-Gap Semiconductors Studied by Terahertz Radiation Pulses R. Adomavicius, R. Šustaviciute, and A. Krotkus Band Structure of InSbN and GaSbN A. Lindsay, A.D. Andreev, E. P. O’Reilly, and T. Ashley Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications S. D. Coomber, L. Buckle, P. H. Jefferson, D. Walker, T. D. Veal, C. F. McConville, T. Ashley Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distribution A. V. Dmitriev and A. B. Evlyukhin InMnAs Quantum Dots: a Raman Spectroscopy Analysis A. D. Rodrigues, J. C. Galzerani, E. Marega Jr., L. N. Coelho, R.. Magalhães-Paniago, and G. J. Salamo Conduction Band States in AlP/GaP Quantum Wells M. Goiran, M..P. Semtsiv, S. Dressler, W. T. Masselink, J. Galibert, G. Fedorov, D. Smirnov, V. V. Rylkov,, and J. Léotin Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy M. Yin, A. Krier, and R. Jones Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE M. Yin, A. Krier, P.J. Carrington, R. Jones, and S. E. Krier Epitaxial Growth and Characterization of PbGeEuTe Layers V. Osinniy, P. Dziawa, V. Domukhovski, K. Dybko, W. Knoff, T. Radzynski, A. Lusakowski, K. Swiatek, E. Lusakowska, B. Taliashvili, A. Boratynski, and T. Story Monte Carlo Simulation of Electron Transport in PbTe V. Palankovski, M. Wagner, and W. Heiss L-Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum Dots S. I. Rybchenko, R. Gupta, I. E. Itskevich, and S. K. Haywood Antimony Distribution in the InSb/InAs QD Heterostructures A.N. Semenov, O.G. Lyublinskaya, B.Ya. Meltser, V.A. Solov'ev, L.V. Delendik, and S.V. Ivanov Transport

Blurb

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics.

The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.