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Kategorie szczegółowe BISAC

Nanowire Field Effect Transistors: Principles and Applications

ISBN-13: 9781461481232 / Angielski / Twarda / 2013 / 290 str.

Dae Mann Kim; Yoon-Ha Jeong
Nanowire Field Effect Transistors: Principles and Applications Dae Mann Kim Yoon-Ha Jeong 9781461481232 Springer - książkaWidoczna okładka, to zdjęcie poglądowe, a rzeczywista szata graficzna może różnić się od prezentowanej.

Nanowire Field Effect Transistors: Principles and Applications

ISBN-13: 9781461481232 / Angielski / Twarda / 2013 / 290 str.

Dae Mann Kim; Yoon-Ha Jeong
cena 403,47
(netto: 384,26 VAT:  5%)

Najniższa cena z 30 dni: 385,52
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"Nanowire Field Effect Transistor: Basic Principles and Applications" places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET.
During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes.
Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Kategorie:
Technologie
Kategorie BISAC:
Technology & Engineering > Electronics - Circuits - General
Technology & Engineering > Materials Science - Electronic Materials
Technology & Engineering > Nanotechnology & MEMS
Wydawca:
Springer
Język:
Angielski
ISBN-13:
9781461481232
Rok wydania:
2013
Wydanie:
2014
Ilość stron:
290
Waga:
0.58 kg
Wymiary:
16.3 x 24.2 x 2.1
Oprawa:
Twarda
Wolumenów:
01
Dodatkowe informacje:
Bibliografia
Wydanie ilustrowane

Quantum Wire and Sub-Bands.- Carrier Concentration and Transport.- P-N Junction Diode: I-V Behavior and Applications.- Silicon Nanowire Field Effect Transistor.- Fabrication of Nanowires and their Applications.- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions.- Green Energy Devices.- Nanowire Field Effect Transistors in Optoelectronics.- Nanowire BioFETs: An Overview.- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology.- Nanowire FET Circuit Design – An Overview.

Dae Mann Kim is Professor of Computational Sciences, Korea Institute for Advanced Study. A physicist by training (PhD in physics, Yale University) but an engineer by profession, Kim started his teaching career at Rice University before moving to Oregon Graduate Institute of Science and Technology and later to POSTECH (S. Korea). He has over 25 years experience teaching quantum mechanics to senior students from engineering, materials science and physics departments. In the last three 3 years he has been teaching quantum mechanics for nanotechnology to entering graduate students at the Advanced Institute for Nano Technology, Sungkyunkwan University, Korea. Collaborating extensively with industrial labs over the years, Kim offered short courses to working engineers at Samsung and LG while on sabbatical there. Professor Kim is currently serving as the chair of the curriculum committee of the Korean Nano Technology Research Society, which is entrusted with writing textbooks on quantum mechanics, and nanoscience and technology. Kim has over 100 publications on the quantum theory of lasers, quantum electronics and micro and nano electronics. He is a Fellow of the Korean Academy of Science and Technology and Associate Editor of IEEE Transactions on Circuits and Systems Video Technology.

“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET.

During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes.

Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.



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