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Kategorie szczegółowe BISAC

Multi-Threshold CMOS Digital Circuits: Managing Leakage Power

ISBN-13: 9781402075292 / Angielski / Twarda / 2003 / 216 str.

Mohab Anis; Mohamed I. Elmasry; Mohamed Elmasry
Multi-Threshold CMOS Digital Circuits: Managing Leakage Power Anis, Mohab 9781402075292 Kluwer Academic Publishers - książkaWidoczna okładka, to zdjęcie poglądowe, a rzeczywista szata graficzna może różnić się od prezentowanej.

Multi-Threshold CMOS Digital Circuits: Managing Leakage Power

ISBN-13: 9781402075292 / Angielski / Twarda / 2003 / 216 str.

Mohab Anis; Mohamed I. Elmasry; Mohamed Elmasry
cena 403,47 zł
(netto: 384,26 VAT:  5%)

Najniższa cena z 30 dni: 385,52 zł
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Over the past decade, reducing the dynamic switching power was the main focus in many of the proposed low-power circuit techniques. At that time, the off-state leakage power was negligible compared to dynamic power. However, as technology scales into the deep-submicron regime, the increase in leakage power can no longer be neglected. Soon, the biggest challenge that SoC designers must resolve is the fact that transistors for digital and memory circuits will be more and more leaky as technology generations advance. The semiconductor industry must therefore reduce leakage current in chip designs by two orders of magnitude over the next ten years, or face an interruption in projected chip complexity. Failure to do so would make the mounting leakage current the "big stumbling block to Moore's Law." Furthermore, cooperative approaches between computer-aided design development, circuit design, and technology process must be examined.
Multi-Threshold CMOS Digital Circuits Managing Leakage Power discusses the Multi-threshold voltage CMOS (MTCMOS) technology, that has emerged as an increasingly popular technique to control the escalating leakage power, while maintaining high performance. The book addresses the leakage problem in a number of designs for combinational, sequential, dynamic, and current-steering logic. Moreover, computer-aided design methodologies for designing low-leakage integrated circuits are presented. The book give an excellent survey of state-of-the-art techniques presented in the literature as well as proposed designs that minimize leakage power, while achieving high-performance.
Multi-Threshold CMOS Digital Circuits Managing Leakage Power is written for students of VLSI design as well as practicing circuit designers, system designers, CAD tool developers and researchers. It assumes a basic knowledge of digital circuit design and device operation, and covers a broad range of circuit design techniques.

Kategorie:
Informatyka
Kategorie BISAC:
Computers > Computer Engineering
Technology & Engineering > Electrical
Computers > Design, Graphics & Media - CAD-CAM
Wydawca:
Kluwer Academic Publishers
Język:
Angielski
ISBN-13:
9781402075292
Rok wydania:
2003
Wydanie:
2003
Ilość stron:
216
Waga:
0.54 kg
Wymiary:
23.5 x 15.5
Oprawa:
Twarda
Wolumenów:
01
Dodatkowe informacje:
Bibliografia
Wydanie ilustrowane

From the reviews:

"This book is written for students of VLSI design and practicing circuit designers and shows how the MTCMOS technology can be used to reduce power dissipation. … The text covers a wide range of circuit design techniques. … Each chapter contains a brief introduction that serves as a quick background, summary that explains the contributions contained therein, and a set of additional references provided for further reading." (A. V. Chashkin, Zentralblatt MATH, Vol. 1041 (16), 2004)

1. Introduction.- References.- 2. Leakage Power: Challenges and Solutions.- 2.1 Introduction.- 2.2 Power Dissipation in CMOS Digital Circuits.- 2.3 Impact of Technology Scaling on Leakage Power.- 2.4 (Vdd-Vth) Design Space.- 2.5 Total Power Management.- 2.6 Leakage Power Control Circuit Techniques.- 2.7 Chapter Summary.- References.- 3. Embedded Mtcmos Combinational Circuits.- 3.1 Introduction.- 3.2 Basic Concept.- 3.3 The Power Minimization Problem.- 3.4 Algorithms.- 3.5 Choosing the High-Vth Value.- 3.6 Chapter Summary.- References.- 4. Mtcmos Combinational Circuits Using Sleep Transistors.- 4.1 Introduction.- 4.2 MTCMOS Design: Overview.- 4.3 Variable Breakpoint Switch Level Simulator [1].- 4.4 Hierarchical Sizing Based on Mutually Exclusive Discharge Patterns.- 4.5 Designing High-Vth Sleep Transistors, the Average Current Method [6].- 4.6 Drawbacks of Techniques.- 4.7 Distributed Sleep Transistors [9] [10].- 4.8 Clustering Techniques.- 4.9 Hybrid Heuristic Techniques.- 4.10 Virtual Ground Bounce.- 4.11 Results: Taking ground bounce into account.- 4.12 Power Management of Sleep Transistors.- 4.13 Chapter Summary.- References.- 5. Mtcmos Sequential Circuits.- 5.1 Introduction.- 5.2 MTCMOS Latch Circuit.- 5.3 MTCMOS Balloon Circuit.- 5.4 Intermittent Power Supply Scheme.- 5.5 Auto-Backgate-Controlled MTCMOS.- 5.6 Virtual Rails Clamp (VRC) Circuit.- 5.7 Leakage Sneak Paths in MTCMOS Sequential Circuits.- 5.8 Interfacing MTCMOS and CMOS blocks.- 5.9 Impact of the High-Vth and Low-Vth values on MTCMOS Sequential Circuit Design.- 5.10 Leakage Feedback Gates.- 5.11 Chapter Summary.- References.- 6. Mtcmos Dynamic Circuits.- 6.1 Introduction.- 6.2 Clock-Delayed Domino Logic: Overview.- 6.3 HS-Domino Logic.- 6.4 MTCMOS CD-Domino Logic: Analysis and Overview.- 6.5 MTCMOS HS-Domino (MHS-Domino) Logic.- 6.6 Domino Dual Cascode Voltage Switch Logic (DDCVSL).- 6.7 Chapter Summary.- References.- 7. Mtcmos Current-Steering Circuits.- 7.1 MOS Current Mode Logic: Overview.- 7.2 Introduction.- 7.3 Minimum Supply Voltage: First Constraint.- 7.4 Saturation Assurance: Second Constraint and the Proposed MTCMOS Design.- 7.5 A 2.5 Gbit/s 1:8 Demultiplexer in MTCMOS MCML.- 7.6 Impact of Using MTCMOS Technology Over MCML Parameters.- 7.7 Chapter Summary.- References.



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