Mosfet Technologies for Double-Pole Four-Throw Radio-Frequency Switch

ISBN-13: 9783319345352 / Angielski / Miękka / 2016 / 199 str.

Viranjay M. Srivastava; Ghanshyam Singh

Opis

This book provides analysis and discusses the design of various MOSFET technologies. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters as well as testing of MOSFETs parameters using image acquisition.

Spis treści

Introduction.- Design of Double-Pole Four-Throw RF Switch.- Design of Double-Gate MOSFET.- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.- Cylindrical Surrounding Double-Gate RF MOSFET.- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.- Testing of MOSFET Surfaces Using Image Acquisition.- Conclusions and Future Scope.

O autorze

Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.

Blurb

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO₂ (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

 ·         Provides a single-source reference to the latest technologies for the design of

Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO₂ based MOSFET;

·         Explains the design of RF switches using the technologies presented and simulates switches;

·         Verifies parameters and discusses feasibility of devices and switches.