Mosfet Technologies: A Comprehensive Bibliography

ISBN-13: 9781468461220 / Angielski / Miękka / 2012 / 377 str.

A. H. Agajanian; A. H. Agajanian

Opis

The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc- cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET's. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET's more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET's.

Spis treści

A. Technologies.- I. Books.- II. Review Articles.- III. Modeling.- 1. General.- 2. MOSFET.- a. Circuit Analysis.- b. Computer Analysis.- c. Numerical Analysis.- d. Two-Dimensional Models.- 3. MISFET.- 4. SOS.- 5. CCD.- 6. GaAs FET.- 7. Others.- IV. Technologies.- 1. General.- 2. MOSFET.- a. Silicon-Gate.- b. Silicide-Gate.- c. Metal-Gate.- d. H-MOS/Scaling.- 3. DMOS.- 4. VMOS.- 5. CMOS.- 6. FAMOS.- 7. MAOS.- 8. MNOS.- 9. SOS.- a. General.- b. MOS.- c. CMOS.- d. ESFI.- 10. CCD.- 11. Group III-V Semiconductor FET.- a. GaAs.- b. Others.- 12. Non-Conventional Dielectrics.- 13. Others.- V. Reliability.- 1. General.- 2. MOS.- 3. CMOS.- 4. MNOS.- 5. SOS.- 6. CCD.- 7. GaAs FET.- 8. Others.- VI. VLSI.- B. Properties and Characterization.- I. Books.- II. Review Articles.- III. Electrical Properties.- 1. Dielectric.- a. Breakdown.- b. Others.- 2. Frequency Dependence.- 3. Instabilities.- 4. Interfacial Properties.- a. General.- b. Fast Surface States.- c. Fixed Charge.- d. Others.- 5. Junction Breakdown.- 6. Leakage Current.- 7. Negative Resistance.- 8. Noise.- 9. Radiation Effects.- a. General.- b. CCD.- c. CMOS.- d. Dielectric.- e. MIS.- f. MOS.- g. SOS.- 10. Substrate Properties.- 11. Switching Behavior.- 12. Temperature Dependence.- 13. Others.- IV. Optical Properties.- 1. Photoelectric Effects.- 2. Others.- V. Characterization.- 1. Impurity Profiles.- 2. C-V Characteristics.- 3. C-t Characteristics.- 4. I-V Characteristics.- 5. Other Techniques.- 6. Instrumentation.- VI. Gettering.- VII. Mis as a Research Tool.- 1. Carrier Mobility.- 2. Minority Carrier Lifetime.- 3. Tunneling Spectroscopy.- 4. Others.- C. Dielectric Thin Films.- I. Books.- II. Review Articles.- III. Theory.- IV. Film-Preparation.- 1. Equipment.- 2. Growth Kinetics.- 3. Doping.- 4. Annealing.- 5. Tehniques.- a. Thermal.- b. Pyrolytic (CVD).- c. Anodic.- d. Sputtering.- e. Plasma Deposition.- f. Evaporation.- g. Others.- V. Physical Measurements.- 1. Structure.- 2. Defects.- 3. Composition.- 4. Impurities.- 5. Contamination.- 6. Thickness.- VI. Film Properties.- 1. Optical.- 2. Mechanical and Thermal Stress.- 3. Ionic Diffusion and Conduction.- 4. Electronic Conduction.- 5. Charge Transport.- a. Injection.- b. Transfer.- c. Trapping.- d. Storage.- e. Others.- VII. Double Dielectrics.- VIII. Organic Dielectrics.- IX. Metal-Dielectric Interface.- X. Passivation.- XI. PSG.