Monolithic Integration in E-Mode GaN Technology

ISBN-13: 9783031156243 / Angielski / Twarda / 2022 / 174 str.

Maik Peter Kaufmann; Bernhard Wicht

Opis

This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.

Spis treści

Introduction.- Fundamentals on GaN Technology for Integration of Power Electronics.- Circuit Integration in E-Mode GaN.- System Integration in Monolithic GaN.- Performance Comparison of Monolithic GaN and Silicon Converters.- Conclusion and Outlook.

O autorze

Maik Kaufmann received the B.Eng. degree in electrical engineering with focus on electronics from the Cooperative State University Baden-Wuerttemberg, Stuttgart, Germany in 2014 and the M.Sc. degree in power and microelectronics from Reutlingen University, Reutlingen, Germany in 2017. He received the Ph.D. degree (Magna Cum Laude) in electrical engineering from Leibniz University Hannover, Germany, in 2021. For his PhD research, he was working on monolithic integration in e-mode GaN technology. After his graduation, he joined the KilbyLabs department of Texas Instruments in Freising in the role of an analog design engineer focusing on circuit design for high-voltage power converters. Dr. Kaufmann co-invented one patent in the area of GaN integration with several more pending.

 

Bernhard Wicht has 20+ years of experience in analog and power management IC design. He received the Dipl.-Ing. degree from TU Dresden in 1996 and the Ph.D. degree (Summa Cum Laude) from TU Munich in 2002. Between 2003 and 2010, he was with Texas Instruments in Germany, responsible for the design of automotive power management ICs. He was a professor at Reutlingen University and he is currently the head of the Chair for Mixed-Signal IC Design at Leibniz University Hannover, Germany. His research interest includes IC design with focus on power management, gate drivers and high-voltage ICs. Dr. Wicht was co-recipient of the 2015 ESSCIRC Best Paper Award and of the 2019 First Prize Paper Award of the IEEE Journal of Emerging and Selected Topics in Power Electronics. In 2018, he received the faculty award for excellent teaching at his university. He invented seventeen patents with several more pending. Dr. Wicht is a member of the Technical Program Committee of ISSCC, where he is currently the chair of the Power Management subcommittee. He was a Guest Editor of the IEEE Journal of Solid-State Circuits-Special Issue of 2019 ISSCC and a Distinguished Lecturer of the IEEE Solid-State Circuits Society in 2020-2021.

Blurb

This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.

• Covers a full range of topics, from technology fundamentals;
• Describes the first monolithically-integrated power converter IC using e-mode GaN technology;
• Presents design techniques addressing GaN-specific challenges and exploiting its unique benefits.