Metallization and Metal-Semiconductor Interfaces

ISBN-13: 9781461280866 / Angielski / Miękka / 2011 / 522 str.

Inder P. Batra; Inder P. Batra

Opis

This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces," held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H."

Spis treści

to Metallization and Metal-Semiconductor Interfaces.- GENERAL SCHOTTKY BARRIER MECHANISMS.- Mechanisms of Barrier Formation in Schottky Contacts.- The Role of Defects and Metal States at the Metal-Semiconc uctor Interface.- Metallization, Bonding and Energetics of Ordered Phases of A1 on Si(l 11).- DEFECTS AT METAL-SEMICONDUCTOR CONTACTS.- Factors Influencing Electrical Barriers at Metal-Semiconductor Interfaces: Gold and Antimony on Indium Phosphide and Cadmium Telluride.- Deep Levels and Band Bending at Metal-Semiconductor Interfaces.- Influence of the Atomic Scale Roughness of a Clean Si Surface on the Interface Formation with Metals.- ?-Doping Layers. The Shaping Of Barrier Potentials By Planar Doping.- TEMPERATURE DEPENDENT METALLIZATION STUDIES.- Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces.- Metal-GaAs(l 10) Interfaces formed at Low Temperature: from Adsorbate- to Metal-Induced Gap States.- Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Yb.- SILICON-SILICIDE INTERFACES.- Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfaces.- Calculated Electronic Structures and Schottky Barrier Heights of (111) NiS22/Si A- and B- Type Interfaces.- Electrical (Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes.- BAND OFFSETS AND BARRIERS.- Relation Between Schottky Barrier Heights, Band Offsets and the Energy Levels of Transition Metal Impurities.- Screening Near Semiconductor Heterojunctions and Valence Band Offsets.- METALLIZATION REVIEW.- The Theory of Schottky Barriers: Controversy or Consensus?.- Metallization of Semiconductor Surfaces as a Function of Coverages.- APPLICATIONS OF TUNNELING TO METAL-SEMICONDUCTOR INTERFACES.- Fermi-Level Pinning by Oxygen and Antimony Adsorbates on the GaAs(l 10) Surface by Scanning Tunneling Spectroscopy.- Initial Stages of Metal-Semiconductor Interface Formation.- Tunneling Spectroscopy and Potentiometry on Cleaved (Al)( jaAs Multilayers.- ALKALI METALS-SEMICONDUCTORS INTERFACES.- Metallization of Metal-Semiconductor Interfaces.- Electronic Structure and Excitations of Metal Overlayer on Semiconductor Surfaces.- Alkali-Metal Overlayers on Silicon Surfaces.- Present Understanding of a Model Metal/Semiconductor Junction: K/Si(001)2x1.- Inverse-Photoemission Studies of Clean and Metal-Covered Semiconductor Surfaces.- Influence of Overlayer Metallization on Schottky-Barrier Formation.- On the Formation of Metal-Semiconductor Interface: The Case of K on GaAs(l 10).- A Theoretical Study of Na Overlayers on the GaAs(l 10) Surface.- Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces.- Adsorption of Cs on Hydrogenated W(110) Surfaces.- Participants.