III-V Compound Semiconductors and Devices: An Introduction to Fundamentals

ISBN-13: 9783030519018 / Angielski / Twarda / 2020 / 537 str.

Norman (K Y. ). Cheng

Spis treści

Preface

PART I   SEMICONDUCTOR FUNDAMENTALS

Chapter 1.           Introduction

1.1          Historical Perspective

1.2          Future outlooks

Chapter 2.           Atomic bonding and crystal structure

2.1          Crystal structures and symmetry

2.2          Ionic bond and inter-atomic forces

2.3          Covalent bond and sp3 hybrid orbit

2.4          Major semiconductor crystal structures

2.5          Reciprocal lattice, diffraction condition, and Brillouin zone

Chapter 3.           Electronic band structures of solids

3.1          Free electron theory and density of states

3.2          Periodic crystal structures and Bloch’s theorem

3.3          Nearly free-electron approximation and energy gap

3.4          The Kronig-Penney model

3.5          Effective mass

3.6          Band structures of common semiconductors

PART II.                COMPOUND SEMICONDUCTOR MATERIALS

Chapter 4.           Compound semiconductor crystals

4.1          Structural properties

4.2          Electrical properties

4.3          Free carrier concentration and Fermi integral

4.4          Surface states in compound semiconductors

4.5          III-V compound semiconductors

4.6          III-N and dilute III-V-N compound semiconductors

Chapter 5.           Material technologies

5.1          Growth of bulk crystals

5.2          Epitaxy

5.3          Liquid phase epitaxy 

5.4          Vapor phase epitaxy

5.5          Molecular beam epitaxy

PART III.               PROPERTIES OF HETEROSTRUCTURES

Chapter 6.           Heterostructure fundamentals

6.1          Energy band alignment

6.2          Strained layer structures

6.3          Strain effect on band-edge energies

6.4          Band-edge energies in strained ternary and quaternary alloys

6.5          Stained nitrides with wurtzite crystal structure

6.6          Construction of heterostructure band diagrams

Chapter 7.           Electrical properties of compound semiconductor heterostructures

7.1          Abrupt heterojunction under equilibrium

7.2          p-N Heterojunction under bias

7.3          Quantum well heterostructures

7.4          Superlattices and minibands

7.5          Heterostructures in electric fields

7.6          Polarization fields in wurtzite quantum wells

Chapter 8.           Optical properties of compound semiconductor heterostructures

8.1          Basic optical properties of dielectric medium

8.2          Absorption in semiconductors

8.3          Radiative transitions between discrete states

8.4          Optical transitions between energy bands

8.5          Non-radiative Auger recombination processes

PART IV.               HETEROSTRUCTURE DEVICES

Chapter 9.           Heterostructure electronic devices

9.1          Metal-semiconductor field-effect transistors (MESFETs)

9.2          Modulation doping and two-dimensional electron gas (2DEG)

9.3          High-electron mobility transistor (HEMT) basics – A triangular quantum well approach

9.4          Operation properties of the HEMT

9.5          Optimal design of the HEMT

9.6          GaN-based HEMT structures

9.7          Heterojunction bipolar transistors (HBTs)

Chapter 10.         Semiconductor lasers and light-emitting diodes

10.1        Device physics of heterostructure lasers

10.2        Structures and properties of injection lasers

10.3        Quantum-well laser

10.4        Vertical cavity surface emitting lasers

10.5        Light-emitting diodes (LEDs)

10.6        Unipolar intersubband quantum cascade (QC) lasers

10.7        Transistor lasers

Appendix

A.            Values of important physical constants

B.            Important physical properties of some indirect semiconductors

C.            Important physical properties of some direct III-V binary semiconductors

D.            Important physical properties of wurtzite III-nitride semiconductors

E.            Bandgap energy of III-V semiconductor ternary alloys

F.            Bandgap and polarization parameters of wurtzite III-nitride semiconductor ternary alloys

O autorze

Keh-Yung Norman Cheng received his Ph.D. degree from Stanford University in 1975 and currently is the Dean of the College of Electrical Engineering and Computer Science at the National Tsing Hua University. In 1979-81 he was a member of Technical Staff at AT&T Bell Laboratories, Murray Hill, New Jersey. Since 1987 he was a professor in the Department of Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign. He became an emeritus professor in August 2010 and joined the Electrical Engineering Department of the National Tsing Hua University in Taiwan. His special fields of interest are molecular beam epitaxy (MBE), compound semiconductor optoelectronic, and nanostructure device technologies. He has authored or coauthored over 400 journal and conference papers, and two book chapters. He is a Fellow of IEEE and AAAS, and a recipient of the 2007 MBE Innovator Award.

Blurb

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices.

Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.