ISBN-13: 9789819966486 / Angielski
ISBN-13: 9789819966486 / Angielski
Part I. Foundation of Emerging Materials
Chapter 1
Introduction to Recent Emerging Materials
Chapter 2 Discovery of Emerging NanomaterialsChapter 3
Carbon-based Nanomaterials: Graphite, Graphene, Carbon Nanotube (CNT)
Chapter 4
Metamaterials
Chapter 5
Perovskite MaterialsChapter 6
Insulators and High-k Materials
Chapter 7
Silicon and IV-Group MoleculesChapter 8
Thermal Function of Nanomaterials
Chapter 9
Mechanical Function of Nanomaterials
Chapter 10
Electrical/Electronic Function of Nanomaterials
Chapter 11
Optical Function of Nanomaterials
Chapter 12
The Other Functions of Nanomaterials
Part II. Fabrication and Design
Chapter 13
Introduction to Latest Fabrication Techniques
Chapter 14
OxidationChapter 15
Molecular Layer Growth – CVD, ALD, EpitaxyChapter 16
Lithography – E-beam, EUV, NIL
Chapter 17
Ion-Implantation
Chapter 18
Metal Deposition
Chapter 19
AI-driven Design Techniques for Emerging Materials
Chapter 20
Multi-wafer Process
Chapter 21
Fabrication of CMOS – Planar MOSFETChapter 22
Fabrication of CMOS – Multi-gate MOSFET Chapter 23 Fabrication of Memory CellChapter 24
Fabrication of Flash TechnologyPart III. Measurement and Test
Chapter 25
Basic Measurement Terminology: Precision, Accuracy, Errors, Standard Deviation
Chapter 26
Reliability Terminology – Range, Resolution, Noise, Bandwidth Chapter 27 Quality Assurance for Material DesignChapter 28
Reliability Testing for Emerging Materials
Chapter 29
Opportunities and Challenges for Reliable Material Design
Chapter 30
Contact Resistance and Schottky BarrierChapter 31
Oxide Layer and TrapsChapter 32
Carrier Lifetime and Generation/Recombination ProcessChapter 33
Practice I. Probe Station
Chapter 34
Practice II. Bipolar Variable Measurement
Chapter 35
Practice III. MOS Variable Measurement
Part IV. Semiconductor Industry Application
Chapter 37
Energy Efficiency Limits of Conventional CMOS TransistorChapter 38
Limitation of Scaling: Power Consumption and Subthreshold Swing
Chapter 39
Beyond Transistor Scaling: Futuristic Device Structure for the Tera-scale Regime
Chapter 40
Negative-capacitance Field Effect Transistor
Chapter 41
Accomplishing Low Power Consumption with Tunneling Transistor
Chapter 42
Advanced Tunnel Field-effect Transistor
Chapter 43
Modelling of Gate Engineered Tunnel Field-effect Transistor Chapter 44 Heterojunction Tunnel Field-effect Transistors and Applications Chapter 45 Graphene and 2D SemiconductorsChapter 46
Spin-based Devices: Nano-magnetic Logic and Magnetic Computing
Chapter 47
Design for High Reliability Transistors by Incorporating New Materials
Chapter 48
Design of Biosensor with High Sensing MarginChapter 49
Design for Artificial Intelligence – Neuron, Synapse, and Neuromorphic Application Chapter 50 Design for Artificial Intelligence System – Neuromorphic Chip Design (CPU, GPU) Chapter 51 Parallel Computation for Artificial Intelligence: Future of Semiconductor Industry Chapter 52 Practice I. 3D TCAD Simulation for CMOS Devices with Emerging MaterialsChapter 53
Practice II. 3D TCAD Simulation for Memory Devices with Emerging Materials
Chapter 54
Practice III. 3D TCAD Simulation for SRAM Circuit with Emerging Materials
Dr. Young Suh Song is a(n):
Dr. Shubham Tayal receive his Ph.D. from NIT Kurukshetra, India. He is currently Assistant Professor at SR University, Warangal, India. His research interests are in the areas of VLSI design and microelectronics.
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