Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures

ISBN-13: 9783642781292 / Angielski / Miękka / 2011 / 428 str.

Morton B. Panish; Henryk Temkin

Opis

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.

Spis treści

1. Introduction.- 1.1 Introduction to Molecular Beam Epitaxy.- 1.2 Introduction to Gas Source Molecular Beam Epitaxy.- 1.3 Why Gas Sources?.- 1.4 Heterostructures with GSMBE.- 2. Chemistry.- 2.1 Equilibrium, the Phase Diagram, and Molecular Beam Epitaxy.- 2.2 Liquid-Solid-Vapor Relationships for the Growth of InP and GaAs.- 2.2.1 Indium Phosphide.- 2.2.2 Gallium Arsenide.- 2.3 III-V Solid Solutions.- 2.3.1 Ga0.47In0.53As.- 2.3.2 Ga0.5In0.5P.- 2.3.3 AlGaAs and AlInAs.- 2.3.4 GaxIn1-xASyP0.471-y.- 2.4 Group III Metalorganics — Metalorganic MBE.- 2.4.1 Decomposition of the Group III Metalorganics.- 2.4.2 Addition Compounds to Replace Group III Alkylmetalorganics.- 2.5 Group V Metalorganics to Replace Arsine and Phosphine.- 3. The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy.- 3.1 Background.- 3.2 Molecular Effusion: The Ideal Effusion Cell.- 3.3 Real Effusion Cells.- 3.3.1 Beam Flux Distribution.- 3.3.2 Time Dependent Flux Variations.- 3.4 Gas Sources and Their Use in GSMBE.- 3.4.1 Thermal Cracking of Arsine and Phosphine and Equilibria Among Group V Molecular Species.- 3.4.2 High Pressure Gas Sources.- 3.4.3 Low Pressure Gas Sources.- 3.5 Introduction of the Group III Metalorganics into the MBE System.- 4. Molecular Beam Epitaxy Systems and Procedures.- 4.1 The Conventional Growth Chamber-Configuration for ESMBE, HSMBE and MOMBE.- 4.2 System Pressure — Pumping.- 4.2.1 System Pressure Limitations for GSMBE.- 4.2.2 Pumping the Growth Chamber.- 4.3 Sample Introduction, Transfer and Manipulation.- 4.4 Substrate Temperature Measurement and Control.- 4.5 Gas Handling.- 4.5.1 Pressure Regulated Control.- 4.5.2 Mass Flow Control.- 4.6 Arsine and Phosphine Generators.- 4.6.1 Electrochemical Arsine and Phosphine Generation.- 4.6.2 Storage of AsH3 and PH3 by Adsorption on Synthetic Zeolite.- 4.7 Safe Handling of Arsine and Phosphine for GSMBE.- 4.8 Procedures for GSMBE.- 4.8.1 Start-up: System Preparation.- 4.8.2 Substrate Preparation and Mounting on the Sample Block.- 4.8.3 Growth of Layers.- 4.9 The RHEED Apparatus, Growth Rate and Composition Calibration.- 4.10 Metalorganic MBE Systems — Potential for Scaleup.- 5. Doping During GSMBE.- 5.1 Background.- 5.2 Maximum Free-Carrier Concentrations in Semiconductors.- 5.3 Background Doping and Carbon Incorporation.- 5.3.1 Background Doping.- 5.3.2 Deliberate Doping with Carbon: GaAs and AlGaAs.- 5.4 Doping with Tin.- 5.4.1 Sn in InP and GaAs.- 5.4.2 Sn in GaInAs.- 5.5 Doping with Be.- 5.5.1 Be in GaAs.- 5.5.2 Be in InP and GaInAs.- 5.6 Zn in InP and GaInAs.- 5.7 Si in GaAs, InP and GaInAs.- 5.8 Semi-insulating InP by Fe Doping During MBE.- 6. Characterization of Heterostructures by High Resolution X-ray Diffraction.- 6.1 X-Ray Diffraction of Epitaxial Layers.- 6.2 Periodic Epitaxial Semiconductor Structures.- 6.3 High-Resolution X-Ray Diffraction.- 6.4 High-Resolution Rocking Curves of Superlattices.- 6.4.1 Strained-Layer Superlattices (SLS).- 6.4.2 Interfacial Layers.- 6.5 Intrinsic Strain at Heterostructure Interfaces.- 7. Optical Properties of Quantum Wells.- 7.1 Energy Levels in Quantum Wells.- 7.2 Single Quantum Wells.- 7.3 Superlattices.- 7.4 Quantum Wires and Boxes.- 7.5 Electric Field Effects.- 7.6 Strained-Layer Superlattices.- 7.6.1 Critical Layer Thickness.- 7.6.2 Strain and Electronic Energy Levels.- 7.6.3 The Strain Model.- 7.6.4 A Type-II GaInAs/InP Superlattice.- 7.6.5 Exciton Energies of Strained GaxIn1-xAs.- 7.7 Thermal Stability.- 8. Carrier Transport Across Quantum Wells and Superlattices.- 8.1 Experimental Techniques.- 8.1.1 Capacitance-Voltage Profiling.- 8.1.2 Admittance Spectroscopy.- 8.1.3 Deep-Level Transient Spectroscopy.- 8.2 Motion of Photo-Induced Holes.- 8.3 Sequential Screening.- 8.4 Barrier Height.- 8.5 Heterojunction Band Offsets.- 8.6 Telegraph Noise.- 9. Bipolar Transistors.- 9.1 Background.- 9.2 Figures of Merit.- 9.2.1 Current Gain.- 9.2.2 High-Speed Characteristics.- 9.3 Device Fabrication.- 9.4 DC Characteristics.- 9.4.1 Moderate Base Doping.- 9.4.2 Lateral Scaling.- 9.4.3 High Doping of the Base.- 9.4.4 Minority Carrier Diffusion Length.- 9.5 Temperature Dependence.- 9.6 Carrier Transport.- 9.7 Gain Dependence on the Base Thickness.- 9.8 Microwave Devices.- 9.9 Applications.- 9.9.1 The Heterostructure Phototransistor.- 9.9.2 Integrated p-i-n-HBT Photoreceiver.- 9.9.3 Laser Drivers.- 9.9.4 Amplifiers.- 10. Optoelectronic Devices.- 10.1 Broad-Area Lasers.- 10.1.1 Separate Confinement Heterostructure (SCH) Lasers.- 10.1.2 Quantum-Well Lasers.- 10.2 Buried Heterostructure Lasers.- 10.3 Single-Frequency Lasers.- 10.3.1 The Distributed Bragg Reflector (DBR) Laser.- 10.3.2 Distributed Feedback (DFB) Lasers.- 10.4 Visible Lasers.- 10.5 Photodetectors.- 10.5.1 Avalanche Photodiodes.- 10.5.2 Strained-Layer Detectors.- 10.6 Quantum-Well Inter-sub-band Detectors.- 11. In-Situ Processing and Selective Area Epitaxy.- 11.1 Pattern Formation.- 11.1.1 In-situ Processing Apparatus.- 11.1.2 Native Oxide Masks.- 11.2 Ion-Induced Damage.- 11.3 Towards Vacuum Lithography.- 11.3.1 Formation of a Native Oxide Mask.- 11.3.2 Pattern Generation in the Oxide Mask.- 11.3.3 Pattern Transfer.- 11.3.4 Oxide Mask Removal.- 11.4 Buried Heterostructures.- 11.5 Selective-Area Epitaxy.- 11.5.1 Selective Growth with Si Masks.- 11.5.2 Selectively Grown Lasers.- 11.5.3 Selective Growth with the Dielectric Masks.- 11.5.4 Diodes and Bipolar Transistors.- References.

O autorze

Today nobody can do without modern semiconductor technology and their application in micro- and optoelectronics. Here, the technique that is able to grow thinnest and best definded layers is described by the "pope" of the method in whose laboratory it was developed. Whoever is involved in research and development or advanced studies in this fascinating field will welcome the unique volume with great interest.