Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices

ISBN-13: 9780792350088 / Angielski / Miękka / 1998 / 507 str.

Eric L. Garfunkel; Alexander Vul; E. L. Gusev

Opis

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Spis treści

Preface. Introduction. 1. Recent Advances in Experimental Studies of SiO2 Films on Si. 2. Theory of the SiO2/Si and SiOxNy/Si Systems. 3. Growth Mechanism, Processing, and Analysis of (Oxy)nitridation. 4. Initial Oxidation and Surface Science Issues. 5. Electrical Properties and Microscopic Models of Defects. 6. Hydrogen/Deuterium Issues. 7. New Substrates (SiC, SiGe) and SOI Technologies. Appendix. Authors Index. List of Workshop Participants.