Electronic Packaging Science and Technology

ISBN-13: 9781119418313 / Angielski / Twarda / 2021 / 336 str.

Chih Chen; King-Ning Tu; Hung-Ming Chen

Spis treści

PrefaceChapter 1 Introduction1.1 Introduction1.2 Impact of Moore's law on Si technology1.3 5G technology and AI applications1.4 3D IC packaging technology1.5 Reliability science and engineering1.6 The future of electronic packaging technology1.7 Outline of the bookReferencesFigures CaptionPart I (Chapter 2 to Chapter 5)Chapter 2 Cu-to-Cu and Other Bonding Technologies in Electronic Packaging2.1 Introduction2.2 Wire bonding2.3 Tape automated bonding2.4 Flip chip solder joint bonding2.5 Micro-bump bonding2.6 Cu-to-Cu direct bonding2.6.1 Critical factors for Cu-to-Cu bonding2.6.2 Analysis of Cu-to-Cu bonding mechanism2.6.3 Microstructures at the Cu-to-Cu bonding interface2.7 Hybrid bonding2.8 Reliability - Electromigration and temperature cycling testsReferencesFigures CaptionProblemChapter 3 Randomly Oriented and (111) Uni-directionally Oriented Nanotwin Copper3.1 Introduction3.2 Formation mechanism of nanotwin Cu3.3 In-situ measurement of stress evolution during nano-twin deposition3.4 Electrodeposition of randomly-oriented nanotwin copper3.5 Formation of uni-directionally (111)-oriented and nanotwin copper3.6 Grain growth of [111] oriented nt-Cu3.7 Uni-directional growth of eta-Cu6Sn5 in microbumps on [111] oriented nt-Cu3.8 Low thermal-budget Cu-to-Cu bonding using [111]-oriented nt-Cu3.9 Nanotwin Cu redistribution layer for fanout package and 3D integrationReferencesFigures CaptionProblemsChapter 4 Solid-Liquid Interfacial Diffusion Reactions (SLID) between Copper and Solder4.1 Introduction4.2 Kinetic consideration of scallop-type growth in SLID4.3 A simple model for the growth of mono-size hemispheres4.4 Theory of flux-driven ripening4.5 Measurement of the nano-channel width between two scallops4.6 Extremely rapid grain growth in scallop-type Cu6Sn5 in SLIDReferencesFigures CaptionProblemsChapter 5 Solid State Reactions between Solder and Copper5.1 Introduction5.2 Layer-type growth of IMC in solid state reaction5.3 Wagner diffusivity5.4 Kirkendall void formation in Cu3Sn5.5 Side wall reaction to form porous Cu3Sn in micro-bumps5.6 Effect of surface diffusion on IMC formation in pillar-type micro-bumpsReferencesFigures CaptionProblemsPart II (Chapter 6 to Chapter 8)Chapter 6 Essence of Integrated Circuits and Packaging Design6.1 Introduction6.2 Transistor and Interconnect Scaling6.3 Circuit Design and Large Scale Integration6.4 System-on-Chip (SoC) and Multi-core Architectures6.5 System-in-Package (SiP) and Package Technology Evolution6.6 3D IC Integration and 3D Silicon Integration6.7 Heterogeneous Integration: An IntroductionReferencesFigures CaptionProblemsChapter 7 Performance, Power, Thermal and Reliability7.1 Introduction7.2 Transistors and Memories Basics7.3 Performance: A Race in Early IC Design7.4 Trending in Low Power7.5 Tradeoff between Performance and Power7.6 Power Delivery and Clock Distribution Networks7.7 Low Power Design Architectures7.8 Thermal Problems in IC and Package7.9 Signal and Power Integrity (SI/PI)7.10 Robustness: Reliability and VariabilityReferencesFigures CaptionProblemsChapter 8 2.5D/3D System-in-Packaging Integration8.1 Introduction8.2 2.5D IC: Redistribution Layer (RDL) and TSV-Interposer8.3 2.5D IC: Silicon, Glass, and Organic Substrates8.4 2.5D IC: HBM on Silicon Interposer8.5 3D IC: Memory Bandwidth Challenge for High Performance Computing8.6 3D IC: Electrical and Thermal TSVs8.7 3D IC: 3D-stacked Memory and Integrated Memory Controller8.8 Innovative Packaging for Modern Chips/Chiplets8.9 Power Distribution for 3D IC Integration8.10 Challenge and TrendReferencesFigures CaptionProblemsPart III (Chapter 9 to Chapter 14)Chapter 9 Irreversible Processes in Electronic Packaging Technology9.1 Introduction9.2 Flow in open systems9.3 Entropy production9.3.1 Electrical conduction9.3.1.1 Joule heating9.3.2 Atomic diffusion9.3.3 Heat conduction9.3.4 Temperature is a variable9.4 Cross-effects in irreversible processes9.5 Cross-effect between atomic diffusion and electrical conduction9.5.1 Electromigration and stress-migration in Al strips9.6 Cross-effect between atomic diffusion and heat conduction9.6.1 Thermomigration in unpowered flip chip solder joints9.7 Cross-effect between heat conduction and electrical conduction9.7.1 Seebeck effect9.7.2 Peltier effectReferencesFigures CaptionProblemsChapter 10 Electromigration10.1 Introduction10.2 To compare the parameters in atomic diffusion and electrical conduction10.3 Basic of electromigration10.3.1 Electron wind force10.3.2 Calculation of the effective charge number10.3.3 Atomic flux divergence10.3.4 Back stress in electromigration10.4 Current crowding and electromigration in 3-dimensional circuits10.4.1 Void formation in the low current density region10.4.2 Current density gradient force in electromigration10.4.3 Current crowding induced pancake-type void formation in solder joints10.5 Joule heating and heat dissipation10.5.1 Joule heating and electromigration10.5.2 Joule heating on mean-time-to-failure in electromigrationReferencesFigures CaptionProblemsChapter 11 Thermomigration11.1 Introduction11.2 Driving force of thermomigration11.3 Analysis of heat of transport, Q* 11.4 Thermomigration due to heat transfer between neighboring pairs of powered and unpowered solder jointsReferencesFigures CaptionProblemsChapter 12 Stress-Migration12.1 Introduction12.2 Chemical potential in a stressed solid12.3 Stoney's equation of biaxial stress in thin films12.4 Diffusional creep12.5 Spontaneous Sn whisker growth12.5.1 Morphology12.5.2 Driving force12.5.3 Kinetics of spontaneous Sn whisker growth12.5.4 Electromigration induced Sn whisker growth in solder join12.6 Comparison of driving forces among electromigration, thermomigration, and stress-migration12.6.1 Products of forceReferencesFigures CaptionProblemsChapter 13 Failure Analysis13.1 Introduction13.2 Microstructure change with and without lattice shift13.3 Statistical analysis of failure13.3.1 Black's equation of MTTF for electromigration13.3.2 Weibull distribution function and JMA theory of phase transformations13.4 A unified model of MTTF for electromigration, thermomigration, and stress-migration13.4.1 Revisit of Black's equation of MTTF for electromigration13.4.2 MTTF for thermomigration13.4.3 MTTF for stress-migration13.4.4 The link among MTTF for electromigration, thermomigration, and stress-migration13.4.5 MTTF equations for any other irreversible processes in open systems13.5 Failure analysis in mobile technology13.5.1 Joule heating enhanced electromigration failure of weak-link in 2.5D IC technology13.5.2 Joule heating induced thermomigration failure due to thermal crosstalk in 2.5D IC technologyReferencesFigures CaptionProblemsChapter 14 Artificial Intelligence on Electronic Packaging Reliability14.1 Introduction14.2 To change time-dependent event to time-independent event14.3 To deduce MTTF from mean microstructure change to failure14.4 Summary

O autorze

King-Ning Tu, PhD, is TSMC Chair Professor at the National Chiao Tung University in Taiwan. He received his doctorate in Applied Physics from Harvard University in 1968.Chih Chen, PhD, is Chairman and Distinguished Professor in the Department of Materials Science and Engineering at National Yang Ming Chiao Tung University in Taiwan. He received his doctorate in Materials Science from the University of California at Los Angeles in 1999.Hung-Ming Chen, PhD, is Professor in the Institute of Electronics at National Yang Ming Chiao Tung University in Taiwan. He received his doctorate in Computer Sciences from the University of Texas at Austin in 2003.