Dispersion Relations in Heavily-Doped Nanostructures

ISBN-13: 9783319367033 / Angielski / Miękka / 2016 / 625 str.

Kamakhya Prasad Ghatak

Spis treści

The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors.- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors.- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors.- The DR in doping superlattices of HD Non-Parabolic Semiconductors.- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.- The DR in Heavily Doped (HD) Non-Parabolic Semiconductors Under Magnetic Quantization.- The DR in HDs Under Cross- Fields Configuration.- The DR in Heavily Doped (HD) Non-Parabolic Semiconductors Under Magneto-Size Quantization.- The DR in Heavily Doped Ultra-thin Films (HDUFs) Under Cross- Fields Configuration.- The DR in Doping Superlattices of HD Non-Parabolic Semiconductors Under Magnetic Quantization.- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors Under Magnetic Quantization.- The DR in QWHDSLs.- The DR in Quantum Wire HDSLs.- The DR in Quantum Dot HDSLs.- The DR in HDSLs Under Magnetic Quantization.- The DR in QWHDSLs Under Magnetic Quantization.- The DR under Photo-Excitation in HD Kane type Semiconductors.- The DR under Intense Electric Field in HD Kane-Type Semiconductors.- The DRs in Low Dimensional Systems in the Presence of Magnetic Field. Few related Applications.- Conclusion and Future Research.

Blurb

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.