Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets

ISBN-13: 9789400704244 / Angielski / Twarda / 2011 / 168 str.

Laurent Leyssenne; Eric Kerherve; Yann Deval

Opis

Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets is intended to designers and researchers who have to tackle the efficiency/linearity trade-off in modern RF transmitters so as to extend their battery lifetime. High data rate 3G/4G standards feature broad channel bandwidths, high dynamic range and critical envelope variations which generally forces the power amplifier (PA) to operate in a low efficiency "backed-off" regime. Classic efficiency enhancement techniques such as Envelope Elimination and Restoration reveal to be little compliant with handset-dedicated PA implementation due to their channel-bandwidth-limited behavior and their increased die area consumption and/or bill-of-material. The architectural advances that are proposed in this book circumvent these issues since they put the stress on low die-area /low power-consumption control circuitry. The advantages of silicon over III/V technologies are highlighted by several analogue signal processing techniques that can be implemented on-chip with a power amplifier. System-level and transistor-level simulations are combined to illustrate the principles of the proposed power adaptive solutions. Measurement on BICMOS demonstrators allows validating the functionality of dynamic linearity/efficiency management. In Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets, PA designers will find a review of technologies, architectures and theoretical formalisms (Volterra series...) that are traditionally related to PA design. Specific issues that one encounters in power amplifiers (such as thermal / memory effects, stability, VSWR sensitivity...) and the way of overcoming them are also extensively considered throughout this book.

Recenzje

"This monograph describes a very substantial work that deals with the theoretical analysis, the simulation, the realization and the measurement of high efficiency power amplifiers for mobile terminals... The described works are of high scientific level and are compared to state-of-the art" Andreas Kaiser, CNRS Research Director at IEMN, Lille, France.

"The content of this work is rich from the stand-point of theory and experiment. The obtained results demonstrate the necessity to take into account a great deal of phenomenons, such as quantization noise in switched PA architectures, thermal effects,and the accurate modelling of active devices in order to reach a high performance level", Patrice Gamand, RF Innovation Center General Manager at NXP Semiconductors, Caen, France.

Spis treści

Preface. Acknowledgments. Abbreviations.

Chapter 1 Mobile Phone Transmitters for Wireless Standards: systems, architectures and technologies. 1.1 RF Cellular/Data Transmission Standards and related Handset Uplink Architectures. 1.2 Power Amplifier Topologies for User Equipment. 1.3. Technologies for Handset PA Design. References.

Chapter 2 Discretized Reconfiguration Techniques for Radiofrequency Power Amplifiers. 2.1 Introduction on fragmented power amplifiers. 2.2 Power Amplifier Bypass Technique. 2.3 Reconfigurable Power Amplifier based on Parallelized Switched Power Cells. 2.4. Delta-Sigma Built-In Current Sensing in the Prospect of Power Amplifier Dynamic Reconfiguration. 2.5 Delta-Sigma-like Closed-loop Dynamically Reconfigurable Power Amplifier. References.

Chapter 3 Continuous Adaptive Bias Technique for Radiofrequency Power amplifiers. 3.1. Introduction and Theory. 3.2 Design and Measurement of the Integrated Passive Device dedicated to PA Module. 3.3 Design and Simulation of the Adaptive Bias Silicon PA. 3.4 Measurement on PA Silicon and PA Module. References.

General Conclusion         

Appendix A Impact of base/emitter degeneration on HBT self-heating behavior.

Appendix B Small-signal analysis of a Common-source Power Stage.

Appendix C Theory of Power and Volterra series.

Appendix D Analysis of Stability in Power Amplifiers.

Index.

O autorze

Laurent Leyssenne received the Ph.D. degree in Electrical Engineering from University of Bordeaux, France in 2009. His main field of research is the design of RF power amplifiers.

Eric Kerhervé received the Ph.D. degree in Electrical Engineering from University of Bordeaux, France in 1994. He joined ENSEIRB and the IMS Laboratory in 1996, where he is currently a Professor in Microelectronics and Microwave applications. He has authored or co-authored more than 190 technical papers, and was awarded 17 patents.

Yann Deval received the Ph.D. degree from the University of Bordeaux, France, in 1994. He joined the University of Bordeaux in 1994 as an Assistant Professor, and became a Full Professor at ENSEIRB, in 2004. From 1994 to 2006, he pursued his research in the domain of analog and radiofrequency integrated circuits at IMS Microelectronics laboratory. Since 2007, he is in charge of the IC Design Group at IMS. He has published more than 90 papers in international journals and conference proceedings.