Solid State Devices: A Quantum Physics Approach

ISBN-13: 9781468406238 / Angielski / Miękka / 2012 / 154 str.

De Cogan, D.

Opis

The changes which have taken place in electronics are truly astonishing. It is difficult to believe that within a single lifespan we have come from the cat's- whisker diode, via the thermionic valve, to the 256K random access memory and beyond. These developments would not have come about without an increased understanding of the physics and technology of the solid state. Although the progression from Planck's quantum postulate to single chip electronic systems within eighty years has resulted in an increased level of specialisation of the fields of knowledge, solid state nevertheless continues to be a cross-disciplinary subject. The design and fabrication of solid state devices involve large elements of chemistry, physics and materials science. However, books on the subject tend to be written by specialists in one or other area. Thus a physics-based text is likely to have more details on quantum theory than is necessary for a technologist. Similarly, texts which concentrate on devices and their applications frequently ignore the fundamental background which is vital for a true understanding.

Spis treści

1 The Elements of Crystallography.- The crystalline state.- Close packing and crystal structure.- Directions within a crystal.- Distances between planes in a simple cubic crystal.- X-ray crystallography.- Further developments in X-ray crystallography: the reciprocal lattice.- Problems.- Reference.- 2 Matter Waves.- The development of quantum mechanics.- The duality concept.- de Broglie’s hypothesis.- Fourier’s theorem.- Heisenberg’s Uncertainty Principle.- Problems.- References.- 3 Wave Mechanics.- Review of wave motion.- Wave functions.- Observables and operators.- Wave mechanics.- Boundary conditions for solution of Schrödinger’s equation.- Problems.- Reference.- Further Reading.- 4 Quantum Theories of Solids.- The Free Electron Theory of Solids.- Fermi-Dirac statistics.- The derivation of S(E).- Thermionic emission.- Field-enhanced emission.- Field emission (Fowler-Nordheim tunnelling).- Photo-electric effect.- Band Theory of Solids.- The velocity of an electron in an energy band.- The effective mass of an electron in an energy band.- Problems.- References.- 5 Electrons and Holes in Semiconductors.- The position of the Fermi level in an intrinsic semiconductor.- The position of the Fermi level in an extrinsic semiconductor.- Carrier concentrations in semiconductors.- Majority and minority carriers.- The motion of carriers in semiconductors.- Semiconductors in non-equilibrium.- Carrier generation and recombination.- The steady-state condition.- Return to equilibrium.- Steady-state injection from a boundary.- Problems.- Reference.- 6 p-n Junctions.- Position of the Fermi level at equilibrium.- The amount of band bending at equilibrium.- The width of the depletion layer as a function of doping densities.- Application of bias.- Capacitance behaviour of p-n junctions.- Current transport in p-n junctions.- Junction breakdown under reverse bias.- Temperature dependence of junction breakdown.- Real diodes.- Problems.- Keterence.- 7 Junction Transistors.- Unipolar (field effect) transistors.- Bipolar transistors.- Transistor gain.- Non-ideal injection efficiency.- Some secondary effects on bipolar transistor performance.- Some considerations for good bipolar transistor design.- Real bipolar transistors.- Problems.- Reference.- 8 Surface Effects and Surface Devices.- The metal-semiconductor contact.- The metal-oxide-semiconductor (MOS) contact.- Metal-oxide-semiconductor (MOS) devices.- Conclusion.- Problems.- Reference.- Solutions to Problems.- Physical Constants and Conversions from Non-SI Units.