Kategoria BISAC: Technology & Engineering >> Electronics - Semiconductors

Semiconductor Modeling: For Simulating Signal, Power, and Electromagnetic Integrity assists engineers both recent graduates and working product designers in designing high-speed circuits. The authors apply circuit theory, circuit simulation tools, and practical experience to help the engineer understand semiconductor modeling as applied to high-speed digital designs. The emphasis is on semiconductor modeling, with PCB transmission line effects, equipment enclosure effects, and other modeling issues discussed as needed. The text addresses many practical considerations,...

High-speed Photodiodes in Standard CMOS Technology describes high-speed photodiodes in standard CMOS technology which allow monolithic integration of optical receivers for short-haul communication. For short haul communication the cost aspect is important, and therefore it is desirable that the optical receiver can be integrated in the same CMOS technology as the rest of the system. If this is possible then ultimately a singe-chip system including optical inputs becomes feasible, eliminating EMC and crosstalk problems, while data rate can be extremely high.

The...

This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.

In "The g_m/I_D Methodology, a Sizing Tool for Low-Voltage Analog CMOS Circuits," we compare the semi-empirical to the compact model approach. Small numbers of parameters make the compact model attractive for the model paves the way towards analytic expressions unaffordable otherwise. The E.K.V model is a good candidate, but when it comes to short channel devices, compact models are either inaccurate or loose straightforwardness. Because sizing requires basically a reliable large signal representation of MOS transistors, we investigate the potential of the E.K.V model...