A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall measurements to check the structural and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce) ions were implanted into the materials with different doses in ranges 1014 9x1015, 1014 5x1016 and 3x1014 2x1015cm-2 respectively. Using rapid thermal annealing (RTA) furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and implanted AlInN samples were annealed...

Quantum dots (QDs) are important in the research and industrial fields due to their diverse properties and technological importance. Recently, QDs have been found to be suitable for biological, biomedical, agricultural, and food science applications. Many research articles, review papers, and internet sources have published on the use of QDs to improve plant growth and yield, but a comprehensive overview in book form has not been available to date. This book provides detailed information on synthesis, functionalization, and the use of various types of quantum dots for plant systems. It also...