In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the...
In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate...
