The 8 MeV electron irradiation on GaN based LED chips creates significant changes in the I-V characteristics (upto 6.8x1014 e/cm2 ) only at the lower bias region. However, emission spectra reveal that there are some defects that are present in the pre-irradiated samples as well as in post irradiated samples. These defects correspond to those identified for n-GaN grown by MOCVD process. Three of these traps correspond to 1 MeV electron radiation induced traps previously reported in GaN. In addition, electron irradiation has introduced two more defects.The effect of high-energy Li ions (40 MeV)...