Advancement of technology exerts enormous pressure on scaling of devices with a view of improved performance. As the physical dimensions of FET device are scaled down consistently, many undesirable short channel effects such as Channel Length Modulation (CLM), Hot Carrier Effect (HCE), Drain Induced Barrier Lowering (DIBL), and subthreshold leakage current becomes more dominant and deteriorates the performance of the short channel devices. The scaling of device technology faces significant challenges to control the short channel effects (SCE) and limits the further shrinkage of device size. A...