This work investigates the application-relevant short-circuit type II and III behaviours of discrete IGBTs and SiC-MOSFETs. Unlike the well-studied SC I, SC II and III involve complex dynamic processes, requiring a deeper physical understanding. External influencing factors such as gate driver design, gate resistance, package parasitics, and magnetic coupling are analysed experimentally, revealing their role in shaping gate voltage overshoot, current peaks, and induced overvoltages.Internally, TCAD simulations highlight the plasma effect in IGBTs, which significantly impacts current peak,...