Amorphous silicon is generally considered unsuitable for light emitting applications because of the indirect nature of its bandgap. Many efforts have been devoted towards the research of different systems compatible with a-Si technology and able to act as light emitters; among these are low-dimensional amorphous silicon structures. In these structures, it has been shown that, zero- phonon optical transitions are allowed and oscillator strength of the zero- phonon transition is significantly enhanced . Therefore, it is expected, the light emission properties will be improved. The aim of this...