Bulk GaP is an indirect-gap (2.26 eV) semiconductor and is a poor light emitter. Therefore, the crystalline size reduction in the formation of porous GaP is the crucial step towards opto- electronic device applications. Porous GaP based structures possess high luminescence efficiency across the wide range from green-blue to UV spectrum. The laser-induced etching process has the added advantage of a control of size and optical properties without needing the use of electrodes. The laser-induced etching process is a promising technique for fabricating many optoelectronic devices including: light...