This work is motivated by the progress and development in the fields of microelectronics and the resulting ongoing miniaturization of components. The miniaturization can cause new kinds of stress related problems which might influence negatively the reliability and durability of the device. Stresses and changes of the microstructure also influence optical and electronic properties of semiconductors like zinc oxide (ZnO). To understand the behavior and properties of materials on the nano- and microscopic scale, it is important to measure stresses with a high as possible lateral resolution....