Strain in SiGe thin films yields enhanced mobilities for both electrons and holes. Addition of Ge to Si also reduces the band gap. These effects make band gap engineering and very high speed devices feasible in all silicon technology. In addition SiGe processing is compatible to silicon process technology. In this book a fast analytical design program for the design of p-channel hetero MOSFET (p-HMOSFET) is discussed.The one dimensional Poisson equation is solved for a simple p-HMOSFET. Using these results an Excel spreadsheet is used as a tool to design a complete analytical design program...