Field emitters are microfabricated sharp
tip structures that facilitate the field emission process
by concentrating the field at the tip. P- type Si based
filed emitter arrays (FEAs) which, unlike metallic tips,
exhibit a high photo- sensitivity saturation regime where
the field emission current is limited due to carrier
depletion and thus can be optically modulated. Optically
modulating a gated p-Si FEA by ultra-short pulses can
bypass the large gate-to-cathode capacitance in
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