Graphene was expitaxially grown on 6H-SiC in a furnace with graphit chamber in an argon atmosphere at 1.5 bar. Dependence of the growth process on temperature and heating time were analyzed. The graphene quality, doping and thickness were analyzed with Raman spectroscopy. Infrared reflection spectroscopy allowed identifying surface plasmon related to graphene. Y-/T-Three Terminal Junctions (TTJ) were fabricated. The dependence of their rectifying behavior on the geometrical design was studied. Thereby a specific parameter was identified determining the behaviour of the TTJs. Furthermore, an...