Over the years, the spray pyrolysis method has been used to deposit thin films of metal oxides and chalcogenide semiconductors. It is well known that the substrate temperature is the central parameter in spray pyrolysis that determines the physical and chemical properties of the deposits. However, somewhat high growth temperatures applied during the spray pyrolysis derived synthesis of metal oxide thin films may limit the surface-to-volume ratio requisite for their reasonable gas sensing characteristics. Thus, there is a strong drive to modify the spray pyrolysis technique in terms of growth...