Self-assembled III-V quantum dots attract intense research interest and effort due to their unique physical properties arising from the three-dimensional confinement of carriers and discrete density of states. Semiconductor III-V quantum-dot laser structures exhibit dramatically improved device performance in comparison with their quantum well counterparts, notably their ultra low threshold current density, less sensitivity to defects and outstanding thermal stability. Therefore, integrating a high-quality quantum-dot laser structure onto silicon-based platform could potentially constitute a...