In this study we report on structural and electric properties of -Ga2O3 on Si and GaN substrates. Since Ga2O3 has a band-gap of 4.8 eV at room temperature and a dielectric constant of 10.2 14.2, Ga2O3 can be a potential candidate dielectrics for MIS devices. -Ga2O3 has been deposited using various techniques such as radio-frequency sputtering, plasma enhanced atomic layer deposition (PEALD), and pulsed laser deposition (PLD). In particular, epitaxial Ga2O3 thin films grown on n-GaN/Al2O3 substrate by PLD technique have a monoclinc -Ga2O3 phase and peaks were indexed as (-2 0 1) and higher...