In the book we have discussed the synthesis of Ge NCs in SiO2 matrix by RF co-sputtering, followed by RTA. It has been observed that the crystallite size increases with the increase in annealing temperature. We have used these annealed samples to study the effects of heavy ion irradiation (120 MeV Ag and 80 MeV Ni at different fluences) on the Ge NCs. We have observed from XRD, Raman and TEM measurements that the size of the Ge NCs decreases with the increase in fluence. The main reason for this is the interaction of tracks formed in SiO2 during irradiation with the embedded Ge NCs. Due to...
In the book we have discussed the synthesis of Ge NCs in SiO2 matrix by RF co-sputtering, followed by RTA. It has been observed that the crystallite s...