This book addresses some surveys on oscillators essentially dedicated to nanoscale circuits, with, a special emphasis on DGMOS; indeed, this later one seems the most relevant device to build nano-osclllators, especially for 3D integration and highly submicronic MOS compatibility. After recalling essential items on noise theory, we choice some demonstrator devices as SiGe heterojunction bipolar transistor (HBT) realized in a standard BiCMOS process, but with a nanometric base thickness, as an active device. Resonant Tunnelling Diode and Single Electrical transistor are also grasped, although...