The co-integration of two dissimilar technologies such as Nano-Electromechanical Systems (NEMS) with the well known metal-oxide-technology (MOS) have helped to develop a new set of emerging devices known as hybrid devices. Among them, non-volatile memories are playing a key role for the replacement of the current flash memory. A promise candidate to surpass Flash memory issues is the Suspended Gate Silicon Nanodot Memory (SGSNM). This memory features a MOSFET as a readout element, a silicon nanodot monolayer as the floating gate (FG) and a movable suspended control gate (SG) that is isolated...