To cope with the rapid pace of device scaling, the semiconductor industry demands multiple data to be stored in a single memory cell which eventually results in high capacity (data storage) miniaturized memory. In this work development of highly repeatable, forming free low voltage, low power resistive switching phenomenon in TiO2 based Metal-Insulator-Metal device structure. The presented thesis, mainly, deals with performance optimization of resistive random access memory towards reliable future generation memory application. Effect on resistive switching performance due to variationin TiO2...
To cope with the rapid pace of device scaling, the semiconductor industry demands multiple data to be stored in a single memory cell which eventually ...
