So far a detailed study on Heterojunction Bipolar Transistor made of Inp/InGaAs with nearly Gaussian Base doping profile, has not been done .Because of that a detailed study on Inp-InGaAs HBT is presented in this work. Two important factors for determining the performance of a transistor are base transit time and current gain ( ). Variations of base transit time and gain with temperature and other device parameters for both uniform and non-uniform base doping profiles are studied here. The non-uniform base doping profile studied here is nearly Gaussian in nature. Dependence of diffusion...