This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET."

Ceramic materials and single crystals showing ferroelectric behavior are being used in many applications in electronics and optics. A large number of applications of ferroelectric ceramics also exploit properties that are an indirect consequence of ferroelectricity, such as dielectric, piezoelectric, pyroelectric and electro-optic properties. This book introduces the basic principles and characteristics of ferroelectric materials and lists various materials chosen from single crystals, ceramics, polymers and ceramic-polymer composites which show ferroelectric behavior. Many different...