The aggressive scaling of the CMOS technology in the deep submicrometer regime gives rise to the short channel effects(SCEs). The double gate or multi-gate devices provide a better scalability option due to its excellent immunity to short-channel effects. This work focuses on the performance analysis of ultra-thin body Triple Metal Double Gate(TM-DG) MOSFET implemented with the high-k dielectric in gate oxide. The TMDG MOSFETs and its electrical characteristics variation especially short channel effects(SCEs) have been simulated and analyzed. optimal doping in the channel region can ...
The aggressive scaling of the CMOS technology in the deep submicrometer regime gives rise to the short channel effects(SCEs). The double gate or multi...
